Piezoresistivity of polycrystalline silicon applying the AIC process-route

Uhlig, Steffen; Rǎu, S.; Schultes, Günter

doi:10.1016/j.sna.2011.09.031

Cited by 10 publications

(5 citation statements)

References 41 publications

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“…the applied strain with a GF of 10.316. The GF of polysilicon film newly developed on flexible polyimide substrate is comparable or even higher than that on traditional rigid substrate [24]- [27], demonstrating the feasibility of pressure sensing with polysilicon on a flexible substrate.…”

Section: Piezoresistivity Testmentioning

confidence: 91%

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Polysilicon Thin Film Developed on Flexible Polyimide for Biomedical Applications

Hartings

et al. 2016

J. Microelectromech. Syst.

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Flexible pressure and thermal sensors are the critical parts of the functional electronic skin of prostheses and robots, as well as flexible catheter/devices for multimodal biomedical monitoring. In this paper, a polysilicon thin film was developed on a flexible polyimide substrate using aluminum induced crystallization process for biomedical pressure and temperature sensing applications. The formation of polycrystalline structure was verified from the developed polysilicon film. Long term stability and real-time temperature tests were performed to evaluate potential application to the in vivo monitoring of brain or body temperature. The linear real-time change of polysilicon resistance with temperature was attained with the temperature coefficient of the resistance of −0.0027/°C and the resolution of 0.05°C. With a gauge factor of 10.3, the polysilicon film developed in this paper represents a promising material for the development of high-sensitivity pressure sensors on flexible polyimide substrates.[ 2015-0106]Index Terms-Aluminum induced crystallization (AIC), biomedical temperature and pressure, polysilicon film on polyimide, temperature coefficient of resistance (TCR), gauge factor.

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Section: Piezoresistivity Testmentioning

confidence: 91%

“…Temperatures for AIC to occur were reported as low as 165°C [23]. Uhlig et al [24] developed polysilicon film on ceramic plates using the AIC process (annealing at 330 to 660°C for up to 6h). Gauge factors (GFs) of 4.5 to 17 and temperature coefficients of resistance (TCR) between −0.4 and −0.1%/K were obtained for the developed film.…”

mentioning

confidence: 99%

Polysilicon Thin Film Developed on Flexible Polyimide for Biomedical Applications

Hartings

et al. 2016

J. Microelectromech. Syst.

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“…The graph shows an increase in GF with increasing [14]. French et al [15] has reported a GF of around 40 for polysilicon films deposited using low-pressure chemical vapour deposition with processing temperature above 560°C, Uhlig et al [16] found a GF value of 24 for microcrystalline silicon obtained by AIC (annealing temperature 660°C), Patil et al [17] reported a GF of 41 for microcrystalline silicon obtained by AIC at processing temperature 400°C. Comparing our results with some high GF data for poly-Si films from the literature, we conclude that we have achieved fairly good GF values for nc-Si films at relatively low processing temperature.…”

Section: Gf ϭ ⌬R/rmentioning

confidence: 99%

Fabrication of high gauge factor piezoresistive nanocrystalline Si film using aluminum-induced crystallization of HWCVD deposited a-Si:H

2014

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Aluminum-induced crystallization (AIC) has been used to achieve device quality nc-Si thin films, at annealing temperatures ranging from 300 to 450°C, exhibiting electronic properties favourable for piezoresistive microelectromechanical systems sensor application. The nc-Si films obtained by AIC at an annealing temperature of 400°C showed hole concentration of the order of 10 18 cm −3 and the Hall mobility was measured to be 13.5 cm 2 V −1 s −1 . The films were subjected to piezoresistive gauge factor measurement and a gauge factor of 43 was recorded in the longitudinal mode under a sample scheme of constant force over the entire sample area, which is the highest reported to date for thin film nc-Si.Résumé : Nous utilisons la cristallisation induite par de l'aluminium (AIC) pour fabriquer des films minces de nc-Si de haute qualité, à des températures de recuit allant de 300 à 450°C et qui montrent des propriétés électroniques favorables à leur utilisation dans des senseurs piézorésistifs MEMS. Les films de nc-Si obtenus par AIC à température de recuit de 400°C montrent une concentration de trous de l'ordre de 10 18 cm -3 et nous mesurons leur mobilité de Hall à 13.5 cm 2 V −1 s −1 . La mesure du facteur géométrique (gauge factor) piézorésistif des films donne une valeur de 43 dans le mode longitudinal, dans un cas où le dispositif est soumis à une force constante sur toute la surface de l'échantillon, ce qui représente la plus haute valeur rapporté à date pour un film mince de nc-Si. [Traduit par la Rédaction]

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“…J Weber studied thin film resonators as environmental pressure sensors and developed a model to evaluate their sensitivity [15]. Steffen developed a polycrystalline silicon thin film resonator with three-layer or two-layer structure, different film strain factors, and different resistance temperature coefficients [16]. Zhao fabricated an odorant biosensor based on ZnO film bulk acoustic resonators (FBARs) with resonant frequency of -1.5 GHz, and demonstrated the potential of FBARs as odorant biosensors [17].…”

Section: Introductionmentioning

confidence: 99%

Effects of Casimir force on multi-field coupled nonlinear vibration of orthotropic micro film

Fu¹,

Xu²

2017

J. vibroeng.

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In this paper, the nonlinear dynamics equations of a multi-field coupled orthotropic micro film are presented. The Krylov-Bogoliubov-Mitropolsky (KBM) method is used to solve the equations. The multi-fields coupled nonlinear resonant frequencies of a micro film are analyzed. The effects of Casimir force and nonlinear parameter on nonlinear resonant frequencies and vibration amplitudes are investigated. A resonant film is designed and produced. Based on the principle of electrostatic excitation and capacitance detection, the resonant frequency of the micro film is detected. It illustrates that the Casimir force has an important influence on the resonant micro film frequencies and should be considered with a small initial clearance.

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Piezoresistivity of polycrystalline silicon applying the AIC process-route

Cited by 10 publications

References 41 publications

Polysilicon Thin Film Developed on Flexible Polyimide for Biomedical Applications

Polysilicon Thin Film Developed on Flexible Polyimide for Biomedical Applications

Fabrication of high gauge factor piezoresistive nanocrystalline Si film using aluminum-induced crystallization of HWCVD deposited a-Si:H

Effects of Casimir force on multi-field coupled nonlinear vibration of orthotropic micro film

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