Piezoresistive microsensors using p-type CVD diamond films

High—temperature Sensors Based on SiC and Diamond Technology

“…After patterning of the masking layer, conventional growth techniques can be used to achieve defined structures. A modified SAD process was reported by Taher et al [70]. This group used a patterned diamond powder photoresist.…”

“…These values depend greatly on the doping concentration and temperature. For comparison, the gauge factors of metals and semiconductors are in the range 2±12 and 5±175, respectively [70]. Silicon is most often used for piezoresistive sensors, but this material is not suitable for high-temperature and harsh environment applications.…”

Pressure sensor using p-type polycrystalline diamond piezoresistors

“…In order to improve a sensitivity of the sensor, boron doping depth and diaphragm thickness were varied. There were several works about piezoresistive effect of the boron-doped diamond films [1][2][3][4][5][6][7][8][9][10][11], but most of the works which employed simple structure such as cantilever beams have been used as the test structure. Investigation of practical sensor chip involving packaging and evaluation of high temperature performance were not enough.…”

Strain sensitivity of highly magnetostrictive amorphous films for use in microstrain sensors

“…Figure 2 shows the strain-dependent permeability of the magnetically isotropic film ͑ versus the sample deflection d and the strain ⑀ acting on the film͒. The strain ⑀ induced by deflection d was calculated using the relation 6 ited the maximum permeability of ϭ1078 at ⑀ϭϪ40 ϫ10 Ϫ6 ͑compressive͒ strain while the minimum one of ϭ150 at ⑀ϭϩ200ϫ10 Ϫ6 ͑extensional͒ strain. A linear change in is observed with respect to ⑀ ranging from Ϫ17ϫ10 Ϫ6 to 40ϫ10 Ϫ6 , where the figure of merit F ϭ(⌬/)/⑀ is evaluated to be 3ϫ10 4 .…”