Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ($\sim$1.5 GPa) Channel Stress

Strain Effects in p-type Devices using Full-Band Monte Carlo Simulations

“…In addition, mechanical stress is used as a technological performance booster for CMOS technology. The impact of stress on carrier transport is then of great importance and is both studied experimentally Suthram et al, 2007) and theoretically (Huet et al, 2008a;Bufler et al, 2008;Pham et al, 2008). In this work, device performance of strained Si p-DGMOS is studied considering uniform biaxial and uniaxial stresses in the channel.…”

The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETs

“…However, due to the continuous demand of high drive current to increase circuit speed, Si is approaching its physical limits. New strained Si channels with about two times electron mobility and four times hole mobility of Si attracts great interest [1,2]. Although extensive study of strained-Si mobility has been reported [1,2], not much is known about the detail of subband structure and mobility for silicon channel under uniaxial stress.…”

“…New strained Si channels with about two times electron mobility and four times hole mobility of Si attracts great interest [1,2]. Although extensive study of strained-Si mobility has been reported [1,2], not much is known about the detail of subband structure and mobility for silicon channel under uniaxial stress. Therefore, we investigate theoretically the conduction band structure with orthorhombic distortion and the abnormal electron mobility enhancement of silicon in inversion layer under uniaxial stress.…”

Engineering piezoresistivity using biaxially strained silicon

“…1 This increase in carrier mobility of strained silicon has been studied extensively, both theoretically and experimentally. [2][3][4][5][6][7] Measured piezocoefficients of unstrained silicon surface channels have been used to explain sufficiently the transport in n-and p-channel metal-oxide semiconductor devices in strained silicon. 6,7 However, use of silicon with grown-in biaxial strain for piezoresistive sensing purposes, where higher accuracy is needed since piezoresistance is the primary effect, has not yet received much attention, and only few experimental results exist.…”

“…[2][3][4][5][6][7] Measured piezocoefficients of unstrained silicon surface channels have been used to explain sufficiently the transport in n-and p-channel metal-oxide semiconductor devices in strained silicon. 6,7 However, use of silicon with grown-in biaxial strain for piezoresistive sensing purposes, where higher accuracy is needed since piezoresistance is the primary effect, has not yet received much attention, and only few experimental results exist. 8 In this paper we study theoretically the piezoresistivity of p-type silicon with grown-in biaxial strain by calculating the change in transport properties of the material in response to a small additional shear stress.…”