Piezoelectric performance enhancement of ZnO flexible nanogenerator by a NiO–ZnO p–n junction formation

Yin, Bing; Qiu, Yu; Zhang, Heqiu; Lei, Jixue; Chang, Yue; Ji, Jiuyu; Luo, Yi; Zhao, Yu; Hu, Lizhong

doi:10.1016/j.nanoen.2015.01.032

Cited by 77 publications

(53 citation statements)

References 39 publications

(40 reference statements)

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“…The hysteretic current-voltage (I-V) characteristics with self-rectifying effect are both found in the two cases. It confirms that the self-rectifying effect should be ascribed to the interface of n-ZnO/p-NiO, which is in agreement with the presence of p-n junction at the interface between n-ZnO and p-NiO in previous reports [19][20][21][22][23][24]. In the Au/ZnO/NiO/ ITO junction, it is difficult to distinguish high resistance state (HRS) and low resistance state (LRS) at positive bias.…”

Section: Resultssupporting

confidence: 89%

“…For example, the conductive filaments of ZnO and NiO are considered to be related to oxygen vacancies or metal ions [15][16][17][18]. Actually, n-ZnO/ p-NiO junction has attracted much attention for the applications in the fields of light-emitted diode, ultraviolet detector, photocatalyst, photovoltaic cell, and piezoelectric nanogenerator over the past 20 years [19][20][21][22][23][24]. Both ZnO and NiO have been individually studied in resistive switching devices.…”

Section: Introductionmentioning

confidence: 99%

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Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Yuan

Chen

et al. 2017

J Sol-Gel Sci Technol

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The n-ZnO/p-NiO junctions have been fabricated by sol-gel method using Al as top electrodes and ITO as bottom electrodes for applications in resistive switching devices. Such devices exhibit homogenous and filamentary characteristics depending on the amplitude of applied bias. The two switching types show different switching polarities and transport mechanisms. Under a higher bias, the filamentary behavior is dominated by Ohmic conduction at low resistance state and trap related Poole-Frenkel conduction at high resistance state, while under a lower bias the homogenous switching exhibits diode conduction at high resistance state and space charge limited current at low resistance state. The homogenous switching shows selfrectifying effect with a good endurance. It may open up a simple route to suppress the sneak current in a p-oxide/noxide device while maintaining reasonable good resistive switching and self-rectifying properties. Graphical AbstractKeywords Resistive random access memory • Resistive switching • Self-rectifying • n-ZnO/p-NiO

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Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Yuan

Chen

et al. 2017

J Sol-Gel Sci Technol

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“…5 corresponding to an output current of 1.2 µA. The current generated from the PENGs with Co-doped ZnO NFs was greater than that from the PENGs with ZnO NWs/PZT (lead zirconate titanate) hetero-junction, namely 270 nA (Im-Jun et al, 2013) and with NiO-ZnO hetero-junction, namely 40 nA/cm² (Yin et al, 2015). Moreover, the maximum output power was equivalent to a power density of 148.8 nW/cm².…”

Section: Performance Of Pengs From Co-doped Zno Nfsmentioning

confidence: 95%

Simple Fabrication and Characterization of Piezoelectric Nanogenerators from Cobalt-Doped Zinc Oxide Nanofibers

Suyitno

Hadi

Sahdan

et al. 2017

American Journal of Applied Sciences

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The ferromagnetic cobalt doped into Zinc Oxide (ZnO) crystals is a promising method for enhancing the performance of PiezoelectricBased Nano Generators (PENGs). The study reports the characterization and testing PENGs which simply fabricated from cobalt-doped ZnO nanofibers (NFs) synthesized by electro spinning machine. The electro spinning processes were conducted at a flow rate of 4 µL/min and at various cobalt concentrations followed by sintering at a temperature of 500°C. The X-Ray Diffraction (XRD) spectra demonstrate that the crystalline diameter of Co-doped ZnO NFs increased as the content of cobalt increased, up to a concentration of 9%. Meanwhile, the maximum output voltage and power density of PENGs with Co-doped ZnO NFs were 221.6 mV and 148.8 nW/cm 2 , respectively when the PENGs were subjected to a cyclic mechanical load of 0.5 kg. Therefore, PENGs fabricated from Co-doped ZnO NFs are challenging for the next generation of self-powered devices.

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“…Similarly, high-efficiency piezoelectric ZnO-based nanogenerators have also been developed for energy harvesting applications by forming ZnO/AlN-stacked layers [14] and adopting free-carrier-modulated ZnO:N piezoelectric thin films [15]. Moreover, there have been attempts to improve the piezoelectric materials or the device performance by adopting new electrodes or forming a p-n junction to block the screening effect based on energy band considerations [15][16][17][18]. The screening effect means that the piezoelectric potential (piezopotential) induced through the piezoelectric ZnO film is canceled by free electrons that exist inherently in a semiconductive ZnO material or electrode.…”

Section: Introductionmentioning

confidence: 99%

“…Some research teams have used insulators or other semiconductor materials to form a good potential barrier to increase output voltages [19]. Other research using AlN or various oxides (MoO x , Cu 2 O, and NiO) has been reported [14,16,18,20]. Despite such intensive research, only few studies were published using SiO 2 as an insulator [21].…”

Section: Introductionmentioning

confidence: 99%

Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

2018

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Abstract:In this paper, we present a study of various ZnO/SiO 2 -stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO 2 /ZnO/SiO 2 micro-energy generators (SZS-MGs) and ZnO/SiO 2 /ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO 2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO 2 thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) magnetron sputtering technique. The effects of the thickness and/or position of the SiO 2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO 2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO 2 thin films in the ZnO/SiO 2 -stacked multilayer structures, in addition to the processing conditions.

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Piezoelectric performance enhancement of ZnO flexible nanogenerator by a NiO–ZnO p–n junction formation

Cited by 77 publications

References 39 publications

Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Simple Fabrication and Characterization of Piezoelectric Nanogenerators from Cobalt-Doped Zinc Oxide Nanofibers

Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

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