2019
DOI: 10.1109/tuffc.2019.2903122
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Piezoelectric-on-Silicon MEMS Lorentz Force Lateral Field Magnetometers

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Cited by 8 publications
(12 citation statements)
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“…Equation ( 13) indicates that the TCF can be approximated as a constant for a given structure since S Si , k Si-AlN , and k Si-SiO 2 are all determined just by material properties and physical dimensions as shown in equations ( 6), (8), and (11). Also, it can be seen from equation ( 13) that either increasing the length (L Si ) or reducing the thickness (T Si ) of the tine can improve TCF.…”
Section: Theoretical Analysismentioning
confidence: 99%
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“…Equation ( 13) indicates that the TCF can be approximated as a constant for a given structure since S Si , k Si-AlN , and k Si-SiO 2 are all determined just by material properties and physical dimensions as shown in equations ( 6), (8), and (11). Also, it can be seen from equation ( 13) that either increasing the length (L Si ) or reducing the thickness (T Si ) of the tine can improve TCF.…”
Section: Theoretical Analysismentioning
confidence: 99%
“…However, conventional piezoelectric resonant sensors based solely on piezoelectric films have problems of low-quality factor (Q) and low power handling capability. To relieve these problems, Thin-film Piezoelectric-on-Substrate (TPoS) resonators composed of a piezoelectric film and underneath substrate layer have been proposed and gained widespread interest [6][7][8][9][10][11]. TPoS resonators combine the benefits of large transduction efficiency in piezoelectric thin films (such as AlN, PZT, and ZnO) and low acoustic loss in substrate materials (such as single crystal silicon, silica, and diamond), which ultimately results in low motional resistances and large Qs.…”
Section: Introductionmentioning
confidence: 99%
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“…Some research studies dealing with MEMS-based resonance sensors have indicated that they employ the thermal actuator due to its large actuation force [8], simple fabrication [9], and flexibility in the choice of materials [10]. Furthermore, piezoresistive-based sensing is also typically used in MEMS sensors besides capacitive [11], piezoelectric [12] or optical transducers [13]. Piezoresistors are the simplest form of piezoresistive devices with several advantages: low cost, small size, low phase lag, and extensive dynamic range [14].…”
Section: Introductionmentioning
confidence: 99%