Piezoelectric GaN sensor structures

Zimmermann, Tom; Neuburger, Martin; Benkart, P.; Hernandez-Guillen, F.J.; Pietzka, C.; Kunze, M.; Daumiller, I.; Dadgar, A.; Krost, A.; Kohn, E.

doi:10.1109/led.2006.872918

Cited by 116 publications

(60 citation statements)

References 23 publications

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“…The effect of mechanical strain, on 2DEG density and output characteristics of AlGaN/GaN heterostructure field effect transistors (HFETs), has been reported earlier. [8][9][10][11][12][13][14][15] High gauge factors (>100) have been reported for quasi-static and step bending response, 8,[12][13][14][15] however, the factors contributing to such high values, especially their deviation from much lower theoretical estimates, are poorly understood. Recently, very high gauge factor of À850 was reported for microcantilevers in transient condition, however, the corresponding dynamic response was not studied.…”

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confidence: 99%

High frequency dynamic bending response of piezoresistive GaN microcantilevers

Talukdar

Qazi

Koley

2012

Applied Physics Letters

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Static and dynamic ac responses of piezoresistive GaN microcantilevers, with integrated AlGaN/GaN heterostructure field effect transistors as highly sensitive deflection transducers, have been investigated. Very high gauge factor exceeding 3500 was exhibited by the microcantilevers, with quality factor determined from electronically transduced ac response exceeding 200 in air and 4500 at low pressure. The gauge factor reduced at resonance frequency of the cantilevers, possibly due to reduced charge exchange with surface donor and trap states. Ultrasonic waves generated in air by a piezochip, and in the Si substrate through photoacoustic effect, could be detected by the cantilevers with high sensitivity.

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High frequency dynamic bending response of piezoresistive GaN microcantilevers

Talukdar

Qazi

Koley

2012

Applied Physics Letters

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“…Aluminum gallium nitride/ gallium nitride (AlGaN/GaN) high-electron mobility transistors (HEMTs) have demonstrated state-of-the-art microwave power performance and are also promising candidates for the use in power electronics, microelectromechanical systems actuators, and sensors [1], [2]. In this configuration, they possess a large bandgap and large conduction band discontinuity, leading to high channel charge densities, 2-D electron gas (2DEG) transport properties with a high carrier mobility, and high breakdown fields.…”

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Testing the Temperature Limits of GaN-Based HEMT Devices

Maier

Alomari

Grandjean

et al. 2010

IEEE Trans. Device Mater. Relib.

127

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“…By coupling such electronic devices with cantilevers constituted of III-N heterostructures, mechanical sensing structure can be obtained to monitor parameters such as pressure, strain or acceleration in harsh environments [7]. In this paper, we present the mechanical modeling of an AlGaN/GaN heterostructure based cantilever.…”

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confidence: 99%