Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates

Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy

“…Many parameters such as the piezoelectric field, the strain, and the effective mass were adjusted to fit the experimental results. Shen et al 7 and Berger et al 8 have directly measured the F pz of the surface-intrinsic-n ϩ (s-i-n) and surface-intrinsic-p ϩ (s-i-p) ͑111͒B structures, respectively, using photoreflectance ͑PR͒ spectroscopy. However, only GaAs direct-gap signals appeared in their experiments, and no excitonic transitions were found from the InGaAs well region.…”