Piezoelectric/electrostrictive multimaterial PMN-PT monomorph actuators

Hall, Asha; Allahverdi, M.; Akdoğan, E. K.; Safari, A.

doi:10.1016/j.jeurceramsoc.2005.03.196

Cited by 35 publications

(21 citation statements)

References 14 publications

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“…[4] Recently, the European Union (EU) provided the restriction of hazardous substances (the so called RoHS) such as lead, since it is considered as toxic for environment in waste from electrical and electronic equipment. In this context, the development of ferroelectric and piezoelectric lead-free compounds constitutes an essential base for the manufacturers in order to carry out new generation of electronic components: healthier for environment or recyclable.…”

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confidence: 99%

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La₂Ti₂O₇ Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO₃ Substrates

et al. 2011

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Abstract(00l)‐Oriented La2Ti2O7 (LTO) thin films with monoclinic perovskite‐layer structure [a = 7.806(2) Å, b = 5.552(3) Å, c = 13.015(5) Å, β = 98.62(2)°] have been grown by a sol–gel route on conducting (110)‐oriented doped Nb:SrTiO3 (STO) substrates. The narrow rocking curves (0.24° width for 004LTO peak) demonstrate the sharp mosaïcity of the films. Using high‐resolution X‐ray diffraction (HR‐XRD), epitaxial relationships between the LTO, and the STO substrate are given. In addition, HR‐XRD evidences the existence of (212)‐oriented crystallites 1.5° disoriented with respect to the plane of the substrate. We confirm, by DFT calculations, that the polarization vector lies in the b‐axis of the LTO cell and consequently, the existence of these (212)‐oriented crystallites enables to explain the origin of the various contrasts observed both on the in‐plane and out‐of‐plane images when collected by piezoresponse force microscopy. Finally, both successful poling experiments performed via the tip of atomic force microscope and the existence of local piezoloops within the domains, unambiguously confirm the ferroelectric state of the films at the nanoscale level. Once again, this study demonstrates that a clear understanding of nanoscale piezoelectric/ferroelectric phenomena in oriented thin films passes through a carefully structural analysis as performed by HR‐XRD.

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confidence: 99%

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La₂Ti₂O₇ Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO₃ Substrates

et al. 2011

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“…In order to extend the feasibility of these materials various actuator schemes have been developed to meet different application specifications. One of the schemes is the development of piezoelectric actuators with functional gradients where gradually changing material, stress, composition or porosity have been tailored to modify field-induced stresses, performance, lifetime and reliability [1][2][3][4][5][6]. In pre-stressed bending actuators, for example, tensile stress varies along the thickness creating a gradient in the piezoelectric d 31 coefficient and resulting in enhanced displacement capabilities [2,4,7].…”

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confidence: 99%

Electromechanical performance of structurally graded monolithic piezoelectric actuator

et al. 2008

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In this paper, the effect of structural gradients in monolithic piezoelectric actuators is investigated. Different cross-section profiles were micro-machined with a laser into commercial PZT 5H bulk discs with thicknesses of 375 µm and 500 µm (∅ 25 mm). Profiles and curvatures of the actuators were measured which showed both concave and convex structures, thus indicating pre-stress of the actuators. After poling, the distribution of out-of-plane displacement was scanned by a fibre-optic laser vibrometer. Maximum displacements of ∼6.3 µm and ∼24.8 µm were obtained from a freely moving and clamped ∼375 µm thick actuator, respectively, in a ±0.5 V/µm electric field at 10 Hz frequency without load. Furthermore, deflection in the centre of the actuators was measured up to 184 mN load using the same electric field and frequency. Bending of the bulk actuators without any additional layer was a consequence of the gradient in poling and driving electric field via thickness variation of the material. Hence, different regions produced strain distribution and bending in a similar fashion to other benders. Actuators with the highest arch height exhibited the highest displacement and load bearing capabilities derived from the increased area moment of inertia and enhanced piezoelectric response due to pre-stress. The results show that the monolithic bending actuators can be realised by simple structural designing of the actuator. Such structural gradients can be one reason contributing to the higher displacement of RAINBOW actuators compared to other pre-stressed actuators. In a further development, the structural gradients can be utilized in high displacement pre-stressed actuators and in miniaturized monolithic piezoelectric devices.

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“…In this paper we summarize the processing and properties of 0.65PMn-0.35PT thick films on Pt-coated alumina substrates, discuss the powder preparation to obtain fine particles of very chemically homogeneous powder, and report on the sintering conditions needed to obtain a dense, single-phase layer. The paper also presents the dielectric properties, piezoelectric d 33 eff constant, and electrostrictive coefficient, and demonstrates the procedure and properties for a highly efficient bending actuator.…”

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“…The dielectric constants were measured with an HP 4284 a Precision lcr impedance meter (agilent Technologies, santa clara, ca). The piezoelectric constants d 33 eff of the 0.65PMn-0.35PT thick films sintered at the 950°c for 2 h and poled with an electric field of 2.5 kV/mm at 160°c for 5 min were measured by berlincourt piezometer, photonic sensor, and atomic force microscope (aFM).…”

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High-performance PMNߝPT thick films

Kosec

Holc

Hrovat

et al. 2010

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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This article describes some of our work on ₀.₆₅Pb(Mg₁/₃Nb(₂/₃)O₃-₀.₃₅PbTiO₃ (0.65PMN-0.35PT) thick films printed on alumina substrates. These thick films, with the nominal composition ₀.₆₅Pb(Mg₁/₃Nb(₂/₃)O₃-₀.₃₅PbTiO₃, were produced by screen-printing and firing a paste prepared from an organic vehicle and pre-reacted fine particles of avery chemically homogeneous powder. To improve the adhesion of the 0.65PMN-0.35PT to the platinized alumina substrate,a Pb(Zr₀.₅₃Ti₀.₄₇)O₃ layer was deposited between the electrode and the substrate. The samples were then sintered at 950 °C for 2 h with various amounts of packing powder on the alumina (Al₂O₃) substrates. The sintering procedure was optimized to obtain dense 0.65PMN-0.35PT films. The films were then characterized using scanning electron microscopy as well as measurements of the dielectric and piezoelectric constants.The electrostrictive behavior of the 0.65PMN-0.35PT thick films was investigated using an atomic force microscope(AFM). Finally, substrate-free, large-displacement bending type actuators were prepared and characterized, and the normalized displacement (i.e., the displacement per unit length) of the actuators was determined to be 55 μm/cm at 3.6 kV/cm.

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Piezoelectric/electrostrictive multimaterial PMN-PT monomorph actuators

Cited by 35 publications

References 14 publications

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La₂Ti₂O₇ Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO₃ Substrates

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La₂Ti₂O₇ Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO₃ Substrates

Electromechanical performance of structurally graded monolithic piezoelectric actuator

High-performance PMNߝPT thick films

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Piezoelectric/electrostrictive multimaterial PMN-PT monomorph actuators

Cited by 35 publications

References 14 publications

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La2Ti2O7 Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO3 Substrates

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La2Ti2O7 Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO3 Substrates

Electromechanical performance of structurally graded monolithic piezoelectric actuator

High-performance PMNߝPT thick films

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Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La₂Ti₂O₇ Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO₃ Substrates

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La₂Ti₂O₇ Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO₃ Substrates