Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes

Tsai, Sheng Chieh; Lü, Cheng; Liu, Chuan Pu

doi:10.1016/j.nanoen.2016.08.061

Cited by 53 publications

(27 citation statements)

References 26 publications

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“…[ 48,49 ] According to the estimation of the degree of compressive stress relaxation of green LED, the redshift for ∼ 1.1 cm −1 of the E 2 (high) peak belonging to GaN film below MQWs region will lead to the blueshift of emission wavelength of about 2 nm. [ 50 ] However, the blueshift is compensated since strain relaxation is beneficial to the In incorporation in the InGaN wells and it leads to an emission peak redshift of ∼26 nm. The slight broadening of the linewidth is likely caused by In alloy fluctuations in In‐richer InGaN wells.…”

Section: Figurementioning

confidence: 99%

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Liu

Zhang

et al. 2020

Advanced Science

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Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridizations. Here, the epitaxy of single‐crystalline GaN films on the chemically activated h‐BN/Al 2 O 3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical‐activated h‐BN provides B—O—N and N—O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga‐polar GaN films with a flat surface. The h‐BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light‐emitting diodes. This work provides an effective way for III‐nitrides epitaxy on h‐BN and a possible route to overcome the epitaxial bottleneck of high indium content III‐nitride light‐emitting devices.

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Section: Figurementioning

confidence: 99%

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Liu

Zhang

et al. 2020

Advanced Science

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“…3 . As the injection current increases, the emission peak energy blue shift can be ascribed to the band-filling effect and QCSE compensated by the electron screening effect [ 16 – 18 ]. Since sample C with the most In composition has the deepest potential well and strongest piezoelectric field, the band-filling effect and charge screening effect are the most significant, so the amount of EL peak energy blue shift is the largest for sample C (166 meV).…”

Section: Resultsmentioning

confidence: 99%

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

et al. 2020

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Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

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“…Therefore, when utilizing PDPL method with GaN-based blue LEDs, care should be taken with its applicable conditions. However, for green LEDs whose indium components are higher than blue LEDs, the piezoelectric polarization induced by lattice mismatch is stronger, which leads to the enhancement of quantum confined Stark effect (QCSE) [23,24]. In consequence, electrons in conduction band and holes in valence band are separated more seriously, which means it is harder to form excitons and carriers are prone to bimolecular recombination.…”

Section: Discussionmentioning

confidence: 99%

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

Wang

Hao

et al. 2019

Applied Sciences

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In this paper, the optical properties of GaN-based green light emitting diode (LED) are investigated and the internal quantum efficiency (IQE) values are measured by temperature dependent photoluminescence (TDPL) and power dependent photoluminescence (PDPL) methods. The "S-shaped” shift of peak wavelength measured at different temperature disappears gradually and the spectra broadening can be observed with increasing excitation power. The IQE calculation results of TDPL, which use the integrated intensity measured at low temperature as unity, can be modified by PDPL in order to acquire more accurate IQE values.

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Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes

Cited by 53 publications

References 26 publications

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

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