Piezoelectric coupling constant in epitaxial Mg-doped GaN and design of pentacene acoustic charge transfer devices

Abstract

CHAPTER 1. INTRODUCTION 1 1.1 Surface acoustic wave devices 1 1.2 Acoustic charge transfer devices 2 1.3 Thesis organization 3 CHAPTER 2. BASICS OF SURFACE ACOUSTIC WAVES AND PIEZOELECTRICITY 5 2.1 Surface acoustic wave in a non-piezoelectric elastic solid medium 5 2.1.1 Wave equations 5 2.1.2 Surface acoustic wave 6 2.2 Surface acoustic wave in a piezoelectric elastic solid medium 8 2.3 Basics of interdigital transducers 9 2.3.1 The structure of a typical interdigital transducer 9 2.3.2 The principle of interdigital transducer operation 9 2.3.3 Electrode reflections of an IDT 11 CHAPTER 3. THE FUNDAMENTALS OF ACT DEVICES 13 3.1 Basic ACT operations 3.2 SAW power requirements 3.3 Structures of charge transport channels in ACT devices iii CHAPTER 4. PIEZOELECTRIC COUPLING CONSTANT IN EPITAXIAL Mg-DOPED GaN 4.1 Introduction 4.2 Experiment 20 4.2.1 Design of SAW filters 4.2.2 Fabrication of SAW filters 4.2.3 Measurement 4.3 Results and Discussion 23 4.4 Conclusions CHAPTER 5. DESIGN OF PENTACENE ACOUSTIC CHARGE TRANSFER DEVICES 5.1 Introduction 5.2 Design of acoustic charge transfer devices using pentacene 31 5.3 Design of a parabolic SAW beam compressor 35 5.4 Design of masks 5.5 Distillation of pentacene 40 5.5.1 The reasons of pentacene distillation 40 5.5.2 The design of a temperature gradient furnace 40 5.5.3 Operation of the furnace 43 5.6 Fabrication of pentacene ACT devices 44