Picosecond transient photoluminescence in high-density Si-nanodisk arrays fabricated using bio-nano-templates

Abstract

Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs1−xSbx quantum dots J. Appl. Phys. 111, 044325 (2012) Real-time synchrotoron radiation X-ray diffraction and abnormal temperature dependence of photoluminescence from erbium silicates on SiO2/Si substrates AIP Advances 2, 012141 (2012) Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Appl. Phys. Lett. 99, 251110 (2011) Temperature and size dependence of time-resolved exciton recombination in ZnO quantum dots Appl. Phys. Lett. 99, 243107 (2011) Additional information on Appl. Phys. Lett.

Temperature dependence of time-resolved photoluminescence in closely packed alignment of Si nanodisks with SiC barriers

“…We assigned these three decaying components from the disk density and excitation power dependences of the PL decay time and intensity [20]. The emission with the slowest decay time τ 1 on the order of 1 ns was interpreted by electron–hole pairs or excitons localized at individual NDs, because this PL component was dominant in the case of low-density dispersive NDs with the disk interspacings larger than 40 nm.…”

“…We have recently proposed a fabrication process of Si nanodisk (ND) arrays, where the Si NDs are formed by damage-free neutral beam (NB) etching for Si thin films covered with etching masks of Fe nanoparticles which are regularly aligned by bio-protein engineering [15-20]. This fabrication process using the bio-templates enables us to prepare closely packed high-density Si NDs with the intentionally designed precise size and spacing in a nanometric scale with flexible film stacking.…”

“…This fabrication process using the bio-templates enables us to prepare closely packed high-density Si NDs with the intentionally designed precise size and spacing in a nanometric scale with flexible film stacking. We have also observed intense photoluminescence (PL) emissions in a visible light region with fast decay times ranging from 10 ps to 2 ns [20]. The fast decaying PL characteristics reflect the dynamics of photo-excited carriers in this high-density Si ND array system, in which wavefunctions of photo-excited carriers overlap among Si NDs to some extent, and the carriers can transfer among the NDs [20].…”

“…We have also observed intense photoluminescence (PL) emissions in a visible light region with fast decay times ranging from 10 ps to 2 ns [20]. The fast decaying PL characteristics reflect the dynamics of photo-excited carriers in this high-density Si ND array system, in which wavefunctions of photo-excited carriers overlap among Si NDs to some extent, and the carriers can transfer among the NDs [20]. Photo-generated or electrically injected carriers need to be effectively transferred among Si NDs for the optical applications to solar cells or light-emitting diodes.…”

Plasmonic enhancements of photoluminescence in hybrid Si nanostructures with Au fabricated by fully top-down lithography

“…To solve this problem, we have employed Si nanodisks (NDs) fabricated by damage-free neutral-beam etching using bio-nano-templates [6-8]. A closely packed two-dimensional alignment of the Si ND with a diameter of 10 nm and interspacing of 2 nm was formed, where the sheet density was 5 × 10 11 cm −2 .…”