Picosecond optospintronic tunnel junctions

Abstract

Significance Spintronic devices have become promising candidates for next-generation memory architecture. However, state-of-the-art devices, such as perpendicular magnetic tunnel junctions (MTJs), are still fundamentally constrained by a subnanosecond speed limitation, which has remained a long-lasting scientific obstacle in the ultrafast spintronics field. The highlight of our work is the demonstration of an optospintronic tunnel junction, an all-optical MTJ device which emerges as a new category of integrated photonic–spintronic memory. We demonstrate 1) laser-induced deterministic and efficient writing by an all-optical approach and electrical readout by tunnel magnetoresistance, 2) writing speed within 10 ps, demonstrated by femtosecond-resolved measurements, and 3) integration with state-of-the-art MTJ performance and a complementary metal–oxide–semiconductor-compatible fabrication progress.

Oscillation of Dzyaloshinskii–Moriya interaction driven by weak electric fields

“…In recent years, with the booming development of spintronic devices, more efficient methods are required to improve storage density, reduce power consumption, and enhance stability. [1][2][3] It has been realized that voltage-controlled magnetic anisotropy (VCMA) combing with spin-orbit torque (SOT) can be a promising manipulation to decrease the critical switching current for both in-plane and perpendicularly magnetized magnetic tunnel junctions (MTJs) in magnetic random-access memory (MRAM). [4][5][6] Similarly, with the assistance of the electric (E) field, the domain wall (DW) motion in race-track devices could also be improved.…”

Field‐Free Spin‐Orbit Torque Switching in Synthetic Ferro and Antiferromagents with Exchange Field Gradient

“…Antiferromagnets are considered as potential candidates for high‐speed and low‐power magnetic information storage due to their strong anti‐interference and ultra‐fast spin dynamics. [ 1–3 ] However, it is insurmountable for antiferromagnets to write or read information as easily as ferromagnets. Synthetic antiferromagnets (SAFs) based on the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction, where the top and bottom ferromagnets are antiferromagnetically coupling through a non‐magnetic spacer layer (Ru or Ir) with appropriate thickness, combine the advantages of antiferromagnets and ferromagnets.…”

Energy Efficient Single Pulse Switching of [Co/Gd/Pt]N Nanodisks Using Surface Lattice Resonances

“…[17,18] Moreover this syntheticferrimagnetic multilayer fits the demands of the data storage industry as it can overcome thermal annealing [22] required for fabricating nanostructures or opto-controllable magnetic tunnel junctions. [23,24] In future applications, AO-HIS is needed to achieve ultrafast magnetic recording while increasing current all-optical areal recording densities requires nanostructures whose writing resolution is not limited by the diffraction limit. Plasmonics provide the tools to manipulate light beyond the diffraction limit.…”

“…[ 17,18 ] Moreover this synthetic‐ferrimagnetic multilayer fits the demands of the data storage industry as it can overcome thermal annealing [ 22 ] required for fabricating nanostructures or opto‐controllable magnetic tunnel junctions. [ 23,24 ]…”