Picosecond luminescence studies of vertical transport in short-period superlattices

The analysis of transient photoluminescence measurements and extraction of carrier recombination lifetimes in GaAs and AlGaAs double heterostructures is discussed. In contrast to recently reported claims, it is demonstrated that even in regions where the measured decay curves show single exponential behavior, the slopes do not, in general, correspond to any single physical carrier lifetime such as the minority-carrier lifetime. A series of measurements over a range of incident optical intensities is required to extract such lifetimes.

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Influence of miniband widths and interface disorder on vertical transport in superlattices

Piazza

Pavesi

Vinattieri

et al. 1993

Phys. Rev. B

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Picosecond luminescence studies of vertical transport in short-period superlattices

Cited by 4 publications

References 11 publications

Vertical electron transport in semiconductor superlattices Monte Carlo simulation

Vertical electron transport in semiconductor superlattices Monte Carlo simulation

Analysis of transient photoluminescence measurements on GaAs and AlGaAs double heterostructures

Influence of miniband widths and interface disorder on vertical transport in superlattices

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