Picosecond Integrated Circuits in Germanium and Silicon

Dill, F.H.; Farber, A.S.; Yu, Hsing-Tse

doi:10.1109/jssc.1968.1049863

Cited by 6 publications

(1 citation statement)

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“…In a control experiment [6], Dill et al showed that Ge bipolar circuits could be three times faster than Si bipolar circuits because of the much higher electron and hole mobilities in Ge. This, together with the merits of SOl lateral bipolar transistors mentioned above suggests that symmetric 978-1-5090-0484-3/16/$31.00 ©2016 IEEE 130 lateral Ge-on-insulator (Ge-Ol) bipolar transistors could be an excltmg, scalable, high-performance, and low-power technology.…”

Section: Introductionmentioning

confidence: 99%

Ge-on-insulator lateral bipolar transistors

Yau

Yoon

Cai

et al. 2016

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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We report the first demonstration of thin-base symmetric lateral NPN bipolar transistors built on 8-inch Ge-on insulator (Ge-OI) wafers. A Ge-OI device can achieve the same collector current as a Si-OI device but at -460 mV lower V/JE due to the bandgap of Ge being 460 meV smaller than that of Si.Lower operation voltage should translate directly into lower power dissipation. CMOS-like process was used to fabricate lateral Ge-OI bipolar transistors. The measured collector and base currents are examined and compared with those of Si-OI and SiGe-OI devices to shed light on process-related device physics. The large observed base current at small V/JE is attributed to recombination at the Ge/BOX interface in the emitter-base diode space-charge region.

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Section: Introductionmentioning

confidence: 99%