Picosecond Electric-Field-Induced Switching of Antiferromagnets

López-Domínguez, Victor; Almasi, Hamid; Amiri, Pedram Khalili

doi:10.1103/physrevapplied.11.024019

Cited by 25 publications

(28 citation statements)

References 24 publications

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“…6. The graphs correspond to cases a when the current pulse is applied between electrodes 2 and 6, I 2-6 write, and b when the writing current is applied between electrodes 1 and 4, I [1][2][3][4] write. For both cases, the device resistance increases due to Joule heating as we apply more write attempts, and for current pulses above 18 mA the output voltage shows a switching behavior, indicating a threshold current density of ~ 36 MA/cm 2 for switching in this structure.…”

Section: Discussionmentioning

confidence: 99%

“…The writing current is applied along the short arms of the double-cross structure. Square points refer to the case of a writing current applied in the arm with the IrMn3 pillar (square red points from electrode 2 to 6, I [2][3][4][5][6] Write, and square blue points from electrode 6 to 2, I Write), and the circle data points correspond to the arm only with Pt (circle brown points from electrode 3 to 5, I [3][4][5] write, and circle dark blue points from electrode 5 to 3, I . The differential voltage of the device only shows a measurable switching signature when the current pulse is applied through the IrMn3 pillar cross, i.e.…”

Section: Current-induced Switching Measurementsmentioning

confidence: 99%

“…The differential voltage of the device only shows a measurable switching signature when the current pulse is applied through the IrMn3 pillar cross, i.e. in cases I [2][3][4][5][6] Write and I Write. b 180˚ switching when the writing current is applied from electrode 1 to 4 (I 1-4 write, square red points) or vice versa (square blue points).…”

Section: Current-induced Switching Measurementsmentioning

confidence: 99%

“…Antiferromagnetic materials (AFMs) provide a pathway to overcome the limitations of ferromagnet (FM)-based spintronic devices, thereby enabling new applications of spintronics in memory, computing, and terahertz electronics [1][2][3][4][5][6]. Their robustness against external magnetic fields, potential for high-density data storage, absence of stray fields, ultrafast dynamics, and high energy efficiency make them an excellent candidate for ultrafast magnetic random access memory [7,8], particularly at deeply scaled technology nodes that are important to emerging applications in artificial intelligence and unconventional (non-von Neumann) computing [9].…”

Section: Introductionmentioning

confidence: 99%

“…write refers to the write current applied between electrodes i and j). In all cases, the electrodes 2 and 3 are used for measuring the differential readout voltage, V [2][3] read, while applying a small reading current, 100 µA, between electrodes 1 and 4. b Schematic representation of the device, showing the current sources (Iwrite and Iread) and the nanovoltmeter (V) connections for one of the switching experiments (I [2][3][4][5][6] write). The other measurement configurations used in this study are outlined in the main text.…”

Section: Introductionmentioning

confidence: 99%

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Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

et al. 2021

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There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn3/Pt devices. A six-terminal double-cross device is constructed, with an IrMn3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

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Section: Discussionmentioning

confidence: 99%

Section: Current-induced Switching Measurementsmentioning

confidence: 99%

Section: Current-induced Switching Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

et al. 2021

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Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance

Shi,

Arpaci,

Lopez‐Dominguez

et al. 2024

Advanced Materials

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Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon‐based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures were not grown using a silicon‐compatible deposition process, and controlling their AFM order required external magnetic fields. Here we show three‐terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter‐deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room‐temperature TMR effect. First‐principles calculations explain the TMR in terms of the momentum‐resolved spin‐dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.This article is protected by copyright. All rights reserved

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Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

Shao,

Khalili Amiri

2023

Adv Materials Technologies

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This article discusses the current state of development, open research opportunities, and application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the voltage‐controlled magnetic anisotropy effect to control their magnetization. The integration of embedded magnetic random‐access memory (MRAM) into mainstream semiconductor foundry manufacturing opens new possibilities for the development of energy‐efficient, high‐performance, and intelligent computing systems. The current generation of MRAM, which uses the current‐controlled spin‐transfer torque (STT) effect to write information, has gained traction due to its nonvolatile data retention and lower integration cost compared to embedded Flash. However, scaling MRAM to high bit densities will likely require a transition from current‐controlled to voltage‐controlled operation. In this perspective, an overview of voltage‐controlled magnetic anisotropy (VCMA) as a promising beyond‐STT write mechanism for MRAM devices is provided and recent advancements in developing VCMA‐MRAM devices with perpendicular magnetization are highlighted. Starting from the fundamental mechanisms, the key remaining challenges of VCMA‐MRAM, such as increasing the VCMA coefficient, controlling the write error rate, and achieving field‐free VCMA switching are discussed. Then potential solutions are discussed and open research questions are highlighted. Lastly, prospective applications of voltage‐controlled magnetic tunnel junctions (VC‐MTJs) in security applications, extending beyond their traditional role as memory devices are explored.

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Picosecond Electric-Field-Induced Switching of Antiferromagnets

Cited by 25 publications

References 24 publications

Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance

Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

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