Picosecond detection and broadband mixing of near-infrared radiation by YBaCuO films

Karasik, Boris S.; Lindgren, Mikael; Zorin, M.; Danerud, M.; Winkler, Dag; Trifonov, V. A.; Gol’tsman, G.; Gershenzon, E. M.

doi:10.1117/12.176131

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“…In contrast, for NdGaO3 the boundary resistance is a "bottleneck" for the heat flow within several nanosecond time interval. More properly the relaxation of phonon temperature is governed by the phonon escape time: Tes ; = CpRbd (5) Here d is the film thickness, v the sound velocity, r the phonon transparency of te boundary between film and substrate, Rô is the thermal boundary resistance and c,, is the phonon specific heat. We think this process is essential during the first 5 ns of S-N transition for samples 1 of the transition.…”

Section: Tephmentioning

confidence: 99%

<title>Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films</title>

et al. 1994

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We report on a study of S-N and N-S current switching in high quality YBaCaO films deposited onto Zr02 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.

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Section: Tephmentioning

confidence: 99%