Picosecond charge variation of quantum dots under pulsed excitation

Kazimierczuk, T.; Goryca, M.; Koperski, Maciej; Golnik, A.; Gaj, J. A.; Nawrocki, M.; Wojnar, P.; Kossacki, P.

doi:10.1103/physrevb.81.155313

Cited by 37 publications

(33 citation statements)

References 31 publications

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“…Dominance of the in-plane emission of the dark exciton over the spin-flip process can be also independently ascertained by detailed analysis of the dynamics of the bright exciton recombination. Figure 4 initial populations of bright and dark states after an excitation pulse due to independent capture of electrons and holes under nonresonant excitation 7,17 (the integrals under fast and slow components appear to be different due to the semi-log scale of the plot). Zero-field lifetime of the dark exciton for this dot yielded 125 ± 20ns.…”

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confidence: 99%

In-plane radiative recombination channel of a dark exciton in self-assembled quantum dots

et al. 2012

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We demonstrate evidence for a radiative recombination channel of dark excitons in self-assembled quantum dots. This channel is due to a light hole admixture in the excitonic ground state. Its presence was experimentally confirmed by a direct observation of the dark exciton photoluminescence from a cleaved edge of the sample. The polarization resolved measurements revealed that a photon created from the dark exciton recombination is emitted only in the direction perpendicular to the growth axis. Strong correlation between the dark exciton lifetime and the in-plane hole g-factor enabled us to show that the radiative recombination is a dominant decay channel of the dark excitons in CdTe/ZnTe quantum dots.

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confidence: 99%

In-plane radiative recombination channel of a dark exciton in self-assembled quantum dots

et al. 2012

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“…At the limit of the low excitation power each QD gives only a few intense lines (Figs. 6 and 7): neutral exciton line (X) and one or two trion lines (X + and/or X − ) 17 . This allows us to estimate the number of emitting dots per area of the laser spot, and consequently, the QDs density.…”

Section: Microphotoluminescence Resultsmentioning

confidence: 99%

Ultra low density of CdTe quantum dots grown by MBE

Kobak

Rousset

Rudniewski

et al. 2013

Journal of Crystal Growth

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This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer thickness. Photoluminescence (PL) measurements at low temperature confirms that both methods can be used for significant reduction of QDs density from 10 10 QD/cm 2 to 10 7 -10 8 QD/cm 2 . For very low QDs density, identification of all QDs lines observed in the spectrum is possible.

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“…The sign of this feature was correlated with the charge state of the QD: average QD charge state was more negative for short delays. The feature was recognized as an effect of different trapping dynamics of electrons and holes [12]. We assumed that the asymmetry between carriers of different signs can be modelled as a difference in the values of carrier capture decay time between electrons and holes.…”

Section: Non-resonant Excitationmentioning

confidence: 99%