Picosecond and high-power UV/Vis light pulsing using gallium nitride field-effect transistors: implementation and design evaluation

Abstract

This paper discusses the development of cost-effective and high-performance picosecond and high-power light pulsers. The use of innovative gallium nitride field-effect transistor technology, in combination with meticulous electronic design and careful selection of light-emitting diodes or laser diodes for ultraviolet and visible spectral ranges, has resulted in superior characteristics compared to commonly used designs. The sub-ns design achieves pulse widths as low as 300 ps, with photon outputs ranging between 104-109 photons per pulse, over a wavelength range of 235-470 nm. Meanwhile, the high-power design achieves pulse widths as low as 1.8 ns, with photon outputs ranging between 107-1011 photons per pulse, and a wavelength range of 375-525 nm. The two designs complement each other in photon outputs, covering a dynamic range of almost ten orders of magnitude. This paper provides an evaluation of the electrical design and emitter selection of both pulsers, as well as their electrical and optical performance.

Fast Characterization of Power LEDs: Circuit Design and Experimental Results

“…Recent reports [18], [19] proposed designs of precision current sources; however, these solutions are unsuitable for the high current levels required for power LEDs. Other recent articles focus on high-speed LED drivers working down to the nanosecond scale [20], [21], [22], [23], but their application remains limited to pulsed test of optoelectronic devices, without focusing on the long-term analysis of the heating transients.…”