2005
DOI: 10.1103/revmodphys.77.1083
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Physics of thin-film ferroelectric oxides

Abstract: This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this we cover the enormous progress that has been made in the first principles computational approach to… Show more

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Cited by 2,004 publications
(1,413 citation statements)
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References 365 publications
(279 reference statements)
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“…Polar solids crystallizing in a perovskite structure have received much interest because of their particular structural and electronic properties [1][2][3][4][5]. Electronic and/or spin correlations in such materials give rise to charge ordering, ferroelectricity, superconductivity, ferromagnetism and other phenomena.…”
Section: Introductionmentioning
confidence: 99%
“…Polar solids crystallizing in a perovskite structure have received much interest because of their particular structural and electronic properties [1][2][3][4][5]. Electronic and/or spin correlations in such materials give rise to charge ordering, ferroelectricity, superconductivity, ferromagnetism and other phenomena.…”
Section: Introductionmentioning
confidence: 99%
“…Readers may find it useful to additionally consult other complementary reviews on the topic [5][6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Although miniaturization and nanoscaling have led to effects that modify the ferroelectric behavior, the latter still requires improved fundamental understanding in the reduced dimensions. 1 In particular for epitaxial ferroelectrics, the misfit strain largely affects the behavior and properties of the thin films. [2][3][4][5] Several theoretical models were developed, predicting the effect of substrate constraints on domain structures in ferroelectric films.…”
Section: Introductionmentioning
confidence: 99%