Physics of the Switching Kinetics in Resistive Memories

Menzel, Stephan; Böttger, U.; Wimmer, Martin; Salinga, Martin

doi:10.1002/adfm.201500825

Cited by 258 publications

(236 citation statements)

References 135 publications

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“…13). The SET time is of the order of microseconds for voltages around 3 V in agreement with the voltage-time dilemma [35]. When the current is calculated for the simulated distributions of vacancies in the gap between filament and bottom electrode [30], an abrupt drop in current during the RESET transition is revealed (Fig.…”

Section: Kinetic Monte-carlo Simulationmentioning

confidence: 76%

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

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The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and rupture of conductive pathways (filaments) in oxide films due to the electric-field-driven migration of oxygen vacancies and/or mobile oxygen ions. It is shown that, for both ionic and covalent oxides under study, the RS behaviour depends only weakly on the oxide film composition and thickness, device geometry (down to a device size of about 20x20 mu m(2)). The devices under study are found to be tolerant to ion irradiation that reproduces the effect of extreme fluences of high-energy protons and fast neutrons. This common behaviour of RS is explained by the localized nature of the redox processes in a nanoscale switching oxide volume. Adaptive (synaptic) change of resistive states of memristive devices is demonstrated under the action of single or repeated electrical pulses, as well as in a simple model of coupled (synchronized) neuron-like generators. It is concluded that the noise-induced phenomena cannot be neglected in the consideration of a memristive device as a nonlinear system. The dynamic response of a memristive device to periodic signals of complex waveform can be predicted and tailored from the viewpoint of stochastic resonance concept. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

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Section: Kinetic Monte-carlo Simulationmentioning

confidence: 76%

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

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“…Conductive Atomic Force Microscopy (CAFM) has been proven to be a powerful tool for studying RS at the nanometer scale [7]. Today, the development of RRAM meets the scaling problem: the RS mechanisms in the RRAM cells with the micrometers size electrodes appear to differ from these in the ones of less size [8]. From this viewpoint, CAFM is a good model system for studying the RS mechanisms in the nanometer-sized devices since the size of the probe-to-sample contact (<10 nm) is of the same order of magnitude as the expected size of electrodes in future RRAM devices [9].…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching in Stabilized Zirconia Films Studied by Conductive Atomic Force Microscopy

Филатов¹,

Антонов²,

Антонов³

et al. 2017

MSCE

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We have applied Conductive Atomic Force Microscopy (CAFM) to study the microscopic mechanism of resistive switching in the ultrathin (3 -5 nm) yttria stabilized zirconia (YSZ) films. Using CAFM, we were able to trace the growth of the individual conductive filaments, which are considered now to be responsible for the resistive switching effect in the transition metal oxides. The growth of the filaments has been proven to be initiated by the defects in the film material including the ones, which are the concentrators of the electric field, in particular, by the roughness (hillocks) of the film/substrate interface. The electron transport via individual filaments has been studied. Besides the butterfly-type hysteresis in the current-voltage (I-V) curves of the probeto-sample contact typical for the bipolar resistive switching, we have observed the I-V curves with resonant peaks attributed to the resonant electron tunneling via the localized electron states in the filaments.

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“…In fact, thermodynamic arguments show [268] that if the resistive switching would only be induced by a change of the center of gravity of the population of point defects in the crystal the induced, new resistance state would not be stable on a long time scale. We therefore argue that the chemical and crystallographic transformation of the core of dislocations seems to be a plausible alternative to models which solely rely on a Schottky-type disorder [267,269,270]. …”

Section: Role Of Dislocations In Resistive Switching Of Tio2 and Srtimentioning

confidence: 99%

Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties

et al. 2018

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Studies on dislocations in prototypic binary and ternary oxides (here TiO 2 and SrTiO 3 ) using modern TEM and scanning probe microscopy (SPM) techniques, combined with classical etch pits methods, are reviewed. Our review focuses on the important role of dislocations in the insulator-to-metal transition and for redox processes, which can be preferentially induced along dislocations using chemical and electrical gradients. It is surprising that, independently of the growth techniques, the density of dislocations in the surface layers of both prototypical oxides is high (10 9 /cm 2 for epipolished surfaces and up to 10 12 /cm 2 for the rough surface). The TEM and locally-conducting atomic force microscopy (LCAFM) measurements show that the dislocations create a network with the character of a hierarchical tree. The distribution of the dislocations in the plane of the surface is, in principle, inhomogeneous, namely a strong tendency for the bundling and creation of arrays or bands in the crystallographic <100> and <110> directions can be observed. The analysis of the core of dislocations using scanning transmission electron microscopy (STEM) techniques (such as EDX with atomic resolution, electron-energy loss spectroscopy (EELS)) shows unequivocally that the core of dislocations possesses a different crystallographic structure, electronic structure and chemical composition relative to the matrix. Because the Burgers vector of dislocations is per se invariant, the network of dislocations (with additional d 1 electrons) causes an electrical short-circuit of the matrix. This behavior is confirmed by LCAFM measurements for the stoichiometric crystals, moreover a similar dominant role of dislocations in channeling of the current after thermal reduction of the crystals or during resistive switching can be observed. In our opinion, the easy transformation of the chemical composition of the surface layers of both model oxides should be associated with the high concentration of extended defects in this region. Another important insight for the analysis of the physical properties in real oxide crystals (matrix + dislocations) comes from the studies of the nucleation of dislocations via in situ STEM indentation, namely that the dislocations can be simply nucleated under mechanical stimulus and can be easily moved at room temperature.

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Physics of the Switching Kinetics in Resistive Memories

Cited by 258 publications

References 135 publications

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Resistive Switching in Stabilized Zirconia Films Studied by Conductive Atomic Force Microscopy

Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties

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