Physics based simulation for studying the impact of contact resistance on DC &amp; RF characteristics of AlGaN/AlN/GaN HEMT

Rastogi, Gunjan; Kaneriya, R.K.; Sinha, Santanu; Upadhyay, R. B.; Bhattacharya, Amartya Kumar

doi:10.23919/ursiap-rasc.2019.8738496

Cited by 3 publications

(4 citation statements)

References 12 publications

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“…In this section, we present our theoretical model based on ISBT, metamaterial and plasmonic phenomena for GaN HEMT THz applications [11][12][13]. We proposed a combined plasmonic and metamaterial-driven ISBT phenomenon as one of the possible modes that can extend GaN HEMT operating frequency well beyond its present cut-off frequency to the THz band.…”

Section: Theoretical Modeling and Simulation Strategymentioning

confidence: 99%

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A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

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Terahertz (THz) technology has attracted tremendous attention recently due to its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety, communication, radar, space science, and so on. Due to non-availability of powerful sources and highly sensitive and efficient detectors, the so-called THz gap remains largely unfilled. Despite seamless efforts from electronics and photonics technology researchers, the desired level of technology development to fill the THz gap still remains a challenge. GaN-based HEMT structures have been investigated as potential THz sources and detectors by a number of researchers. This chapter presents a very new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) GaN high electron mobility transition (HEMT) devices. ISBT phenomena are usually demonstrated in photonic devices like a quantum cascade laser (QCL). Here we explore ISBT in an electronic GaN HEMT device. Conventional photonic devices like a QCL are operated at cryogenic temperature to minimize thermal effect. Tuning the conduction band through external gate bias is an advantage of an HEMT device for room temperature (RT) THz applications. This chapter demonstrates the theoretical and experimental novel ISBT phenomenon in GaN HEMT is for potential ambient applications in the THz range.

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Section: Theoretical Modeling and Simulation Strategymentioning

confidence: 99%

“…Figure 3. (a) Output characteristics (id-Vd), (b) transfer characteristics (id-Vg) and (c) Transconductance of the simulated device (reprinted with permission from Ref [11]…”

mentioning

confidence: 99%

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

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“…These HEMTs generate a high‐mobility 2D electron gas (2DEG) with a sheet carrier density of 10 13 cm −2 at the heterointerface on the GaN side, due to the spontaneous and piezoelectric fields in accordance with the difference between the lattice constants of AlGaN and GaN . To improve the performance of AlGaN/GaN HEMTs, an AlN interlayer is widely used between AlGaN and GaN because of the effect of low alloy scattering . The nitrogen‐polar (N‐polar) GaN/AlGaN structure is attracting interest because of the back‐barrier effect of AlGaN, and several promising results have been reported .…”

Section: Introductionmentioning

confidence: 99%

“…[10,11] To improve the performance of AlGaN/GaN HEMTs, an AlN interlayer is widely used between AlGaN and GaN because of the effect of low alloy scattering. [12][13][14][15] The nitrogen-polar (N-polar) GaN/AlGaN structure is attracting interest because of the back-barrier effect of AlGaN, and several promising results have been reported. [16,17] A higher frequency operation requires a substrate with a high resistivity and high breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

Ito

Sakamoto

Isono

et al. 2020

Physica Status Solidi (b)

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A nitrogen‐polar (N‐polar) AlGaN/AlN high‐electron‐mobility transistor (HEMT) is proposed, and the generation of a 2D electron gas (2DEG) is simulated. The band diagram of N‐polar (Al)GaN/AlN shows the generation of the 2DEG, whereas that of the conventional metal‐polar (Al)GaN/AlN structure shows the generation of a 2D hole gas. Furthermore, the concentration of the 2DEG is considerably high even when the (Al)GaN layer is as thin as a few nanometers. N‐polar AlGaN/AlN is grown on sapphire substrates with a misorientation angle of 2°; furthermore, atomic force microscope measurements in a range of 5 × 5 μm2 demonstrate that the root‐mean‐square value obtained from atomic force microscopy of N‐polar AlGaN is approximately 0.7 nm. N‐polar AlGaN layers with a thickness of approximately 40–60 nm with more than 50% Al content are almost coherently grown on the N‐polar AlN layer with a thickness of approximately 400 nm.

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Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

et al. 2019

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High‐electron‐mobility transistors (HEMTs) utilizing gallium nitride (GaN)‐based heterostructures are potential structures for the development of room temperature terahertz (THz) source and detectors. The corresponding material system also offers immense and exciting physical effects governing its behavior at THz frequencies. This behavioral simulation has been attempted for undoped aluminum gallium nitride/ aluminum nitride /GaN heterostructure for THz applications in the present work using technology computer‐aided design platform. Self‐consistent solutions of Schrodinger and Poisson equations are solved to calculate quantized energy states. The work also presents physics‐based device modeling of GaN HEMT structure using the simulated properties of heterostructure like electron mobility, two‐dimensional electron gas concentration, polarization charge concentration, conduction band energies, and so forth. Measurement‐based approach has been adopted to increase the reliability of the simulation and modeling. Various semiconductor characterization techniques have been utilized for this purpose. It is studied and presented that intersubband transition phenomenon is possible mode especially at THz frequency and can significantly contribute to extend the GaN‐HEMT operating frequency well beyond its present cutoff frequency to THz band.

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Physics based simulation for studying the impact of contact resistance on DC & RF characteristics of AlGaN/AlN/GaN HEMT

Cited by 3 publications

References 12 publications

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

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