Physics-Based Modeling of GaN HEMTs

Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S. K.; Rödle, Thomas; Selberherr, S.

doi:10.1109/ted.2011.2179118

Cited by 50 publications

(23 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Analytical models describing v d -E characteristics have been widely used in device simulators [37], [48], [49]. With the relation between mobility and drift velocity, v d = μE, the analytical models are compatible with the experimental measurements of drift velocity play important role in development of mobility models used in device simulations [17], [19], [37].…”

Section: Resultsmentioning

confidence: 99%

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Atmaca

Narin

Kutlu

et al. 2018

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The aim of this paper is an investigation of electric field-dependent drift velocity characteristics for Al 0.3 Ga 0.7 N/AlN/GaN heterostructures without and with in situ Si 3 N 4 passivation. The nanosecond-pulsed currentvoltage (I -V ) measurements were performed using a 20-ns applied pulse. Electron drift velocity depending on the electric field was obtained from the I -V measurements. These measurements show that a reduction in peak electron velocity from 2.01 × 10 7 to 1.39 × 10 7 cm/s after in situ Si 3 N 4 passivation. Also, negative differential resistance regime was observed which begins at lower fields with the implementation of in situ Si 3 N 4 passivation. In our samples, the electric field dependence of drift velocity was measured over 400 kV/cm due to smaller sample lengths. Then, a wellknown fitting model was fitted to our experimental results. This fitting model was improved in order to provide an adequate description of the field dependence of drift velocity. It gives reasonable agreement with the experimental drift velocity data up to 475 kV/cm of the electric field and could be used in the device simulators. ). T. V. Malin and V. G. Mansurov are with the Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia. K. S. Zhuravlev is with the Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia, and also with the

show abstract

Section: Resultsmentioning

confidence: 99%

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Atmaca

Narin

Kutlu

et al. 2018

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…The electron scattering associated with the impurities is less in this region because of the absence of doping in the GaN channel. Thus the electrons in the 2DEG regions possess a high mobility, resulting in high speed device [14].…”

Section: Algan/gan Hemt Structurementioning

confidence: 99%

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

Jebalin

Rekh

Prajoon

et al. 2015

Microelectronics Journal

View full text Add to dashboard Cite

“…1c. In this configuration, the air space underneath the field-gate greatly reduces the parasitic capacitance [3]; meanwhile, the short space still enables the field-plate to suppress the peak field near the drain [4]. It is therefore expected that with such an ASFP gate, both high frequency and high power can be achieved in GaN based HEMTs.…”

Section: Introductionmentioning

confidence: 99%