Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency

A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET’s

“…It implies that most of the lateral electrical field induced by the variation of the drain voltage is completely absorbed in the gate materials (2) and (3). Both of the gates are the so-called screen gates [13]. Good agreement with the simulated results verifies the analytical 2D model.…”

“…5 shows the analytical potential contours and those simulated by the 2D device simulator. The potential contours under the gate material 1 having a high work function has the tendency to bend vertically, which indicates that the electrical field from the gate of material 1 can easily penetrate into the channel and control the threshold behavior (this gate of material 1 is the so-called control gate [13]. On the other hand, the potential contours under the gate materials (2) and (3) with low work functions are apt to bend laterally.…”

Effect of gate engineering in double-gate MOSFETs for analog/RF applications

“…The gate-engineered MOSFET surface potential model, however, requires accuracy and physicsbased formulations together with computational efficiency for circuit simulation applications. There have been studies of the modeling of gate-engineered MOSFET device characteristics [25][26][27][28]. Analytical model describing several benefits of DMG [27], DM-DG structure [8,25], TM structures [26,28] are valid only in subthreshold regime.…”

“…There have been studies of the modeling of gate-engineered MOSFET device characteristics [25][26][27][28]. Analytical model describing several benefits of DMG [27], DM-DG structure [8,25], TM structures [26,28] are valid only in subthreshold regime. The analytical model for TM gate stack MOSFET developed by solving Poisson's equation in the depletion region [26], suffers from the inherited deficiency of quasi 2-D approach for potential analysis, especially for the inaccuracy in the prediction of potential near the source and drain side.…”

“…The analytical model for TM gate stack MOSFET developed by solving Poisson's equation in the depletion region [26], suffers from the inherited deficiency of quasi 2-D approach for potential analysis, especially for the inaccuracy in the prediction of potential near the source and drain side. In addition, the level of accuracy of the parabolic potential based models [8,26,27] using the polynomial approximation of the potential generally depends on the degree of the polynomial approximated. These models provide fundamental ideas for the circuit designers to understand the gate engineered MOSFET device physics and characteristics.…”