Physics-based analytical model for ferromagnetic single electron transistor

Abstract

A physically based compact analytical model is proposed for a ferromagnetic single electron transistor (FSET). This model is based on the orthodox theory and solves the master equation, spin conservation equation, and charge neutrality equation simultaneously. The model can be applied to both symmetric and asymmetric devices and does not introduce any limitation on the applied bias voltages. This feature makes the model suitable for both analog and digital applications. To verify the accuracy of the model, its results regarding a typical FSET in both low and high voltage regimes are compared with the existing numerical results. Moreover, the model's results of a parallel configuration FSET, where no spin accumulation exists in the island, are compared with the results obtained from a Monte Carlo simulation using SIMON. These two comparisons show that our model is valid and accurate. As another comparison, the model is compared analytically with an existing model for a double barrier ferromagnetic junction (having no gate). This also verifies the accuracy of the model.