The efficient production of spin-polarized currents at room temperature is fundamental to the advancement of spintronics. Spinfilter materials -semiconductors with unequal band gaps for each spin channel -can generate spin-polarized current without the need for spin-polarized contacts. In addition, a spin-filter material with zero magnetic moment would have the advantage of not producing strong fringing fields that would interfere with neighboring electronic components and limit the volume density of devices. The quaternary Heusler compound CrVTiAl has been predicted to be a zero-moment spin-filter material with a Curie temperature in excess of 1000 K. In this work, CrVTiAl has been synthesized with a lattice constant of a = 6.15 Å. Magnetization measurements reveal an exceptionally low moment of μ = 2.3 x 10 -3 µB/f.u. at a field of μ0H = 2 T, that is independent of temperature between T = 10 K and 400 K, consistent with the predicted zero-moment ferrimagnetism. Transport measurements reveal a combination of metallic and semiconducting components to the resistivity. Combining a zero-moment spin-filter material with nonmagnetic electrodes would lead to an essentially nonmagnetic spin injector. These results suggest that CrVTiAl is a promising candidate for further research in the field of spintronics.Future spintronic devices rely on the production of spin-polarized currents at room temperature.1-4 Spin-polarized currents can be generated several ways: by passing an unpolarized current through a ferromagnetic contact, using the spin-Hall or spin-Seebeck effects, by ballistic and hot electron injection, by employing spin-polarized materials such as half-metals, or using a spin-filter material. Half metals 5-9 and spin-filter (SF) materials 10,11 are especially suitable for spin injectors that are based on magnetic tunnel junctions (MTJs). 12 Furthermore, a spin injector using a spin-filter material is simpler, as it does not require magnetic electrodes.Spin-filter materials are magnetic semiconductors where the two spin states have unequal band gaps, shown in Fig. 1. When unpolarized electrons tunnel through a thin SF barrier they encounter a potential barrier that is lower for one spin state. As the tunneling probability increases exponentially with decreasing barrier height, the current for one spin direction will be much larger than for the other spin direction, thus creating a spin-polarized current. In practice, a spin filter is a simple MTJ-based device with the tunneling insulator replaced by the SF material, but more importantly, the magnetic MTJ electrodes are replaced by a nonmagnetic metal.13 This polarizing effect can be varied by applying a voltage to the spin-filter electrodes, hence creating a tunable spin valve. Spin filter devices have been fabricated with the magnetic semiconductor EuS 11,14 ; unfortunately, its low Curie temperature (TC = 16 K) limits its applicability.