Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces

Yang, Xuming; Yang, Kun; Chen, Xiu Fang; Yan, Peng; Hu, Xiao; Xu, Xin

doi:10.4028/www.scientific.net/msf.821-823.68

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…Xianglong Yang et al reported that the use of off-axis seeds in PVT growth of 4H-SiC could change the growth mechanism 5 . By observing the surface morphology of SiC single crystals grown from off-axis seeds, two growth models were proposed, one was the spiral growth induced by screw dislocation and the other was the step flow growth induced by atomic steps 5 . By adjusting the thermal field, the formation and migration of facets could be controlled.…”

Section: Introductionmentioning

confidence: 99%

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Research progress of large size SiC single crystal materials and devices

et al. 2023

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SiC semiconductor is the focus of recent international research. It is also an important raw material for China to achieve carbon emission peak and carbon neutrality. After nearly 20 years of research and development, we focus on the three types SiC crystals, n-type, p-type and semi-insulating, indicating the development of Shandong University for crystal growth. And defects control, electrical property, atomic polishing, and corresponding device authentication all obtain great progress. Total dislocation density of 6-inch n-type substrates decreases to 2307 cm−2, where BPD (Basal Plane Dislocation) lowers to 333 cm−2 and TSD (Threading Screw Dislocation) 19 cm−2. The full width at half maximum (FWHM) (0004) rocking curves is only 14.4 arcsec. The resistivity reaches more than 1E + 12 Ω·cm for semi-insulating SiC and lower than 20 mΩ·cm for n-type SiC. The impurity concentrations in 6-inch high-purity semi-insulating (HPSI) SiC crystals reach extreme low levels. The devices made of various substrate materials have good performance.

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Section: Introductionmentioning

confidence: 99%

“…Recently, p-type SiC has attracted extensive attention because of its application prospect in bipolar power and vertical electronic devices 1 . In high-voltage fields, gate turn off (GTO) thyristor and insulated gate bipolar transistor (IGBT)are mainstream devices owing to their lower dissipation [3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

Research progress of large size SiC single crystal materials and devices

et al. 2023

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Influence of extended defects and oval shaped facet on the minority carrier lifetime distribution in as-grown 4H-SiC epilayers

Cui

Zhou

et al. 2019

Diamond and Related Materials

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Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Zhang

et al. 2022

Materials

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SiC substrates have outstanding advantages over traditional materials in power device application, and are mainly prepared by a physical vapor transport method (PVT). Whether the PVT furnace works by resistance heating or induction heating, both face the problem of the deterioration of growth conditions during a long-term process. The relative position of the thermal field directly affects the crystal growth conditions, but the law of specific influence and the change in physical environment inside the thermal field have not been made sufficiently clear and lack systematic research. Therefore, SiC single crystal growth, with different directions and rates in the direction of movement of the heating module, was modeled using a simulation method, and the law of variation of the physical field, including heat flux, temperature, powder porosity and growth rate parameters under different schemes, was analyzed. The study indicates that the decay of raw materials is the primary reason why growth conditions cannot be maintained. The results verified that different coils’ modes of movement have different effects on the improvement or adjustment of SiC crystals’ growth conditions. Under the same temperature control conditions, the coils’ movement rates of 200 μm/h, 0, −200 μm/h and −400 μm/h correspond to the average growth rates of 140, 152, 165 and 172 μm/h, respectively. The results show that downward displacement of the coils is beneficial in compensating for the deterioration of growth conditions, but it is easier to form convex surfaces and is not conducive to expanding diameter growth. This also verifies that the desired crystal growth state can be obtained by adjusting the position of the thermal field.

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Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces

Cited by 3 publications

References 14 publications

Research progress of large size SiC single crystal materials and devices

Research progress of large size SiC single crystal materials and devices

Influence of extended defects and oval shaped facet on the minority carrier lifetime distribution in as-grown 4H-SiC epilayers

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

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