Physical TCAD Model for Proton Radiation Effects in SiGe HBTs

Petrosyants, Konstantin O.; Kozhukhov, Maxim V.

doi:10.1109/tns.2016.2572658

Cited by 15 publications

(5 citation statements)

References 17 publications

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“…This is consistent with the results in Refs. [14] and [15], indicating that the model we built is reasonable. This model can also be extrapolated to other SiGe HBT devices.…”

Section: Simulation Of Proton-induced Carrier Lifetime Alterationmentioning

confidence: 77%

“…[11][12][13][14] For SiGe HBTs, displacement defects caused by protons in the Van Allen belt and solar galactic cosmic rays can act as effective trapping and recombination centers that can reduce the minority carrier life-time so that less minority carriers injected from the emitter can cross the base region and reach the collector junction, leading to the degradation of the transistor current gain. [15] However, it is also worth noting that the displacement defects induced by space radiation sources usually distribute uniformly in the whole device. The minority carrier lifetime is also altered in other parts of the device, such as the lightly doped substrate, which is confirmed to be a crucial feature dominating the single-event charge collection of bulk SiGe HBTs.…”

Section: Introductionmentioning

confidence: 99%

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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor*

Wei¹,

He²,

Li³

et al. 2019

Chinese Phys. B

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This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the single-event transient (SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor (SiGe HBT). The ion-induced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design (TCAD) simulation. The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected. With a proton fluence of 5×1013 cm−2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation (DTI), where prompt funneling collection is the dominating mechanism. Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.

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“…This is consistent with the results in Refs. [14] and [15], indicating that the model we built is reasonable. This model can also be extrapolated to other SiGe HBT devices.…”

Section: Simulation Of Proton-induced Carrier Lifetime Alterationmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor*

Wei¹,

He²,

Li³

et al. 2019

Chinese Phys. B

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show abstract

“…The impedance looking into the output terminal of the first branch (Z CAS ) that included the cascode stage was assumed to be very high (or simply an open circuit). Then, the total output impedance of the circuit (Z OUT ) was derived as Equation (8). In addition, r o and C 2 were assumed to be an open and a short, respectively.…”

Section: Lna Schematic and Device Modelingmentioning

confidence: 99%

“…Still, SiGe HBTs undergo performance degradation due to total ionizing dose (TID), and they can show increases in leakage current and reductions in gain. The key mechanism associated with this degradation includes the generation of traps in the emitter-base (EB) spacer and oxide area of the shallow trench isolation (STI) [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

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“…In fact, compared with metal-oxide-semiconductor field-effect transistor (MOSFET), silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) possess higher transit frequency and superior matching property [7]. In addition, due to its reliability in extreme environmental conditions and inherent tolerance to irradiation effects, it is suitable for special applications such as space exploration [8][9][10]. With the rapid development of semiconductor integrated circuits, BiCMOS technology can offer the synthesis of low power excellence of CMOS and low distortion capability of HBT [11,12], facilitating the design of high-performance ADCs.…”

Section: Introductionmentioning

confidence: 99%

A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology

et al. 2019

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A 5 GS/s 8-bit analog-to-digital converter (ADC) implemented in 0.18 μm SiGe BiCMOS technology has been demonstrated. The proposed ADC is based on two-channel time-interleaved architecture, and each sub-ADC employs a two-stage cascaded folding and interpolating topology of radix-4. An open loop track-and-hold amplifier with enhanced linearity is designed to meet the dynamic performance requirement. The on-chip self-calibration technique is introduced to compensate the interleaving mismatches between two sub-ADCs. Measurement results show that the spurious free dynamic range (SFDR) stays above 44.8 dB with a peak of 53.52 dB, and the effective number of bits (ENOB) is greater than 5.8 bit with a maximum of 6.97 bit up to 2.5 GS/s. The ADC exhibits a differential nonlinearity (DNL) of -0.31/+0.23 LSB (least significant bit) and an integral nonlinearity (INL) of -0.68/+0.68 LSB, respectively. The chip occupies an area of 3.9 × 3.6 mm2, consumes a total power of 2.8 W, and achieves a figure of merit (FoM) of 10 pJ/conversion step.

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Physical TCAD Model for Proton Radiation Effects in SiGe HBTs

Cited by 15 publications

References 17 publications

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor*

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor*

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology

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