Physical Properties of Zinc Oxide Films Prepared by dc Reactive Magnetron Sputtering at Different Sputtering Pressures

Subramanyam, T. K.; Naidu, B. S.; Uthanna, S.

doi:10.1002/1521-4079(200010)35:10<1193::aid-crat1193>3.0.co;2-6

Cited by 75 publications

(42 citation statements)

References 15 publications

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“…Zinc oxide (ZnO), a metal-oxide semiconductor with the wide band gap of 3.3 eV, exhibits some special properties in its nano form, such as larger specific surface, sensitivity to surrounding perturbants, high surface activity, piezoelectric properties, etc. [4]. Because of these special properties, it has received widespread attention in recent years [5].…”

Section: Introductionsupporting

confidence: 89%

Heat induced voltage generation in electrochemical cell containing zinc oxide nanoparticles

Mondal

Basu²,

Das

et al. 2010

Energy

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Section: Introductionsupporting

confidence: 89%

Heat induced voltage generation in electrochemical cell containing zinc oxide nanoparticles

Mondal

Basu²,

Das

et al. 2010

Energy

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“…The thickness of TiO 2 and ZnO layers were 1000 nm and 80nm, respectably measured by piezoelectric thickness measurement (SQM-242 codeposition control and software, Sigma Instrument). The ZnO layer has been selected as a barrier layer because of its good transmittance 9 . During the deposition, the temperature and thickness were recorded.…”

Section: Deposition Proceduresmentioning

confidence: 99%

Nanostructured phothocatalytic TiO₂ thin film fabricated by magnetron sputtering on glass

Nejand

Sanjabi

Ahmadi

2012

Int. J. Mod. Phys. Conf. Ser.

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TiO2 thin film was deposited by a DC reactive magnetron sputtering on ZnO/soda-lime glass substrate and single crystal SiO2 below 200 ˚C. ZnO layer was used as a buffer layer. Deposition was performed at Ar + O2 gas mixture with a pressure of 1.0 Pa and oxygen with a constant pressure of 0.2 Pa. The TiO2 / ZnO thicknesses were approximately 1000 nm and 80 nm, respectively. As-deposited films were annealed at 400 C. The structure and morphology of deposited layers were evaluated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The transmittance of the films was measured using ultraviolet-visible light (UVvis) spectrophotometer. Photocatalytic activities of the samples were evaluated by the degradation of 2-propanol. The microstructure of annealed films was anatase, having improved photocatalytic activity. The surface grain size of TiO2 thin film after annealing was found about 25-35 nm and crystal size was approximately 8 nm. By using ZnO thin film as buffer layer, the photocatalytic property of TiO2 films was improved.

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“…[5][6] Cadmium oxide has a high conductivity resulting from the presence of cadmium atoms in interstitial sites or due to oxygen vacuums [3]. Cadmium oxide has a high absorption factor that can be used in solar systems to increase its efficiency in photovoltaic cells and is used as window layers in Hetrojunction Solar Cells and transparent electrodes in solar cell technology.…”

Section: Introductionmentioning

confidence: 99%

Studying Structural, Morphological And Optical Properties of Cadmium Oxide

2018

Adv. in Nat. Appl. Sci.

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CdO is an n-type semiconductor with a rock-salt crystal structure (fcc) and possesses a direct band gap of 2.2 eV . Its high electrical conductivity and high optical transmittance in the visible region of solar spectrum along with a moderate reflective index make it useful for various applications, photodiodes, gas sensors, etc. CdO and CdO:Cuthin films have been prepared on glass substrates at 380C°substrate temperature by the chemical spray pyrolysis(CSP) method using an aqueous solution with varying copper concentrations. The thickness of the films have been measured to be (200±5)nm. The films have been characterized to evaluate the structure ,morphology, transmittance and optical energy band gab. X-ray diffraction(XRD) studies show that the films are polycrystalline with cubic structures. The optical band gab energies and types of optical transition and absorption of the films have been determined from the optical transmittance spectra. The optical absorption studies in the wavelength range 300-900 nm show that band gap energy values of the films increase from (2 to 3)eV as the Cu concentration increases.

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Physical Properties of Zinc Oxide Films Prepared by dc Reactive Magnetron Sputtering at Different Sputtering Pressures

Cited by 75 publications

References 15 publications

Heat induced voltage generation in electrochemical cell containing zinc oxide nanoparticles

Heat induced voltage generation in electrochemical cell containing zinc oxide nanoparticles

Nanostructured phothocatalytic TiO₂ thin film fabricated by magnetron sputtering on glass

Studying Structural, Morphological And Optical Properties of Cadmium Oxide

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Physical Properties of Zinc Oxide Films Prepared by dc Reactive Magnetron Sputtering at Different Sputtering Pressures

Cited by 75 publications

References 15 publications

Heat induced voltage generation in electrochemical cell containing zinc oxide nanoparticles

Heat induced voltage generation in electrochemical cell containing zinc oxide nanoparticles

Nanostructured phothocatalytic TiO2 thin film fabricated by magnetron sputtering on glass

Studying Structural, Morphological And Optical Properties of Cadmium Oxide

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Nanostructured phothocatalytic TiO₂ thin film fabricated by magnetron sputtering on glass