Physical properties of tin oxide thin films deposited using magnetron sputtering technique

Abstract

Tin oxide (SnO 2 ) films were grown by radio frequency magnetron sputtering at room temperature condition on glass substrates at various deposition times from 10 to 30 minutes with 10 minutes time intervals. A ceramic target of tin oxide was used and sputtering process with the argon and oxygen flow rate of 25 sccm and 8 sccm, respectively. The power given to the system is 225 W and total chamber pressures of 8.25 mTorr were used during the deposition. The deposition rate of SnO 2 thin film at this condition was 15.28 nm/minute. The morphology and roughness of the films were analyzed by FESEM and AFM, respectively. In general, the grain size of SnO 2 increased with the film thickness. Sheet resistances and electrical resistivity of the films were measured by probe station. Sheet resistance decreased with the film thickness increased. While the electrical resistivity directly proportional to the film thickness.