Physical Properties of SiC

Choyke, W. J.; Pensl, Gerhard

doi:10.1557/s0883769400032723

Cited by 219 publications

(99 citation statements)

References 7 publications

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“…These polytypes are well established in SiC and can be considered as a superstructure in the stacking along the c axis of a basic hexagonal lattice. 12,13 The sizes of 6H grains ranged from 1 to 5 m, while some of the 4H grains had a rod-shaped appearance with lengths up to 30 m. The grain structure of the material was stable up to the highest annealing temperature used ͑2120 K͒. The dominant defects in the material were stacking faults ͑SFs͒ on the ͑0001͒ planes with associated partial dislocations, and some black and white dots.…”

Section: Methodsmentioning

confidence: 99%

Microstructural evolution of helium-implanted α-SiC

2000

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Helium has a decisive effect on the microstructure of silicon carbide materials after implantation and subsequent annealing. A dense population of bubbles and dislocation loops is already observed at relatively low displacement doses after annealing of helium-implanted ␣-SiC, while no visible damage appears after irradiation without helium implantation under otherwise equal conditions. The defects are separated from grain boundaries by defect-free zones of approximately 0.5 m width. The most intriguing features of the evolving microstructure are lenticular cavities ͑platelets͒, which transform to disk-shaped arrangements of bubbles with associated dislocation loops or even stacks of loops. The observed microstructural evolution and its dependence on implantation dose, annealing temperature, and time are quantitatively explained and discussed in terms of diffusion of interstitial He atoms and their clustering between adjacent lattice planes, thus forming nanocracks during implantation. The relaxation of the high gas pressure by matrix atom transfer from bubbles to loops during annealing and the coarsening of bubble-loop complexes are described by a coupled twocomponent Ostwald ripening process.

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Section: Methodsmentioning

confidence: 99%

Microstructural evolution of helium-implanted α-SiC

2000

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“…5 Conversion materials that can be incorporated in this type of compact system include diamond, 6 SiC, 7 and GaAs. 8 These wide bandgap materials offer good electronic mobility 9,10 and low leakage currents 11,12 and are radiation hard. 13 Because of their wide bandgap, they should also present higher conversion efficiency than alternative narrower bandgap materials such as silicon, since efficiency increases linearly with bandgap.…”

Section: Introduction a Nuclear Microbatteriesmentioning

confidence: 99%

Gallium arsenide 55Fe X-ray-photovoltaic battery

Butera

Lioliou

Barnett

2016

Journal of Applied Physics

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The effects of temperature on the key parameters of a prototype GaAs 55Fe radioisotope X-ray microbattery were studied over the temperature range of −20 °C to 70 °C. A p-i-n GaAs structure was used to collect the photons from a 254 Bq 55Fe radioisotope X-ray source. Experimental results showed that the open circuit voltage and the short circuit current decreased with increased temperature. The maximum output power and the conversion efficiency of the device decreased at higher temperatures. For the reported microbattery, the highest maximum output power (1 pW, corresponding to 0.4 μW/Ci) was observed at −20 °C. A conversion efficiency of 9% was measured at −20 °C.

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“…Over the years, research and development [1][2][3][4][5][6][7][8] have been devoted to fully utilizing this functional material for high-power, highfrequency, and high-temperature applications, as well as for operation in harsh environments, such as nuclear reactors, high-energy physics experiments, and space applications. SiC materials and composites are being considered for advanced nuclear applications, such as structural materials and fuel coatings in fission reactors and structural components in fusion reactors.…”

Section: Introductionmentioning

confidence: 99%

Damage profile and ion distribution of slow heavy ions in compounds

Zhang¹,

Bae²,

Sun³

et al. 2009

Journal of Applied Physics

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Slow heavy ions inevitably produce a significant concentration of defects and lattice disorder in solids during their slowing-down process via ion-solid interactions. For irradiation effects research and many industrial applications, atomic defect production, ion range, and doping concentration are commonly estimated by the stopping and range of ions in matter (SRIM) code. In this study, ion-induced damage and projectile ranges of low energy Au ions in SiC are determined using complementary ion beam and microscopy techniques. Considerable errors in both disorder profile and ion range predicted by the SRIM code indicate an overestimation of the electronic stopping power, by a factor of 2 in most cases, in the energy region up to 25 keV/nucleon. Such large discrepancies are also observed for slow heavy ions, including Pt, Au, and Pb ions, in other compound materials, such as GaN, AlN, and SrTiO3. Due to the importance of these materials for advanced device and nuclear applications, better electronic stopping cross section predictions, based on a reciprocity principle developed by Sigmund, is suggested with fitting parameters for possible improvement.

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Physical Properties of SiC

Cited by 219 publications

References 7 publications

Microstructural evolution of helium-implanted α-SiC

Microstructural evolution of helium-implanted α-SiC

Gallium arsenide 55Fe X-ray-photovoltaic battery

Damage profile and ion distribution of slow heavy ions in compounds

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