Physical properties of memory quality PECVD silicon nitride

Khaliq, M.; Shams, Qamar A.; Brown, W.D.; Naseem, Hameed A.

doi:10.1007/bf02652118

Cited by 15 publications

(11 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the concentration of silane increases the breakdown strength decreases to 308V/μm due to increase in conductivity. The same trend has also been reported by (Khaliq et. al.…”

Section: I-v Measurementssupporting

confidence: 91%

Fabrication and characterization of PECVD silicon nitride for RF MEMS applications

et al. 2012

View full text Add to dashboard Cite

The structural, optical and electrical properties of plasma enhanced chemical vapor deposited silicon nitride layers are investigated, which have been used as a dielectric layer during RF MEMS fabrication. During growth, the gas ratio (SiH 4 /NH 3 ) is varied between 0.33-0.5 and pressure is varied between 400-700mTorr while deposition time is kept constant. The results in the films show differing properties. The thicknesses of the resultant films are between 150 to 220nm with different gas flow ratios and pressures whereas the deposition time was kept constant. A Bruggeman effective medium approximation is utilized to model the refractive index of the films. Reflectance measurements were carried out in the range of 210-250nm. The refractive indexes of the films varied between 1.79 to 2.03, with a dielectric constant varying from 6.66 to 7.22. Capacitance voltage measurements yield a fixed dielectric charge value in the low-10 12 cm -2 while a breakdown voltage of 915V/μm is achieved for films grown at the lowest gas ratio and pressure. The quality of Si/Si x N y interface is also considered.

show abstract

“…As the concentration of silane increases the breakdown strength decreases to 308V/μm due to increase in conductivity. The same trend has also been reported by (Khaliq et. al.…”

Section: I-v Measurementssupporting

confidence: 91%

Fabrication and characterization of PECVD silicon nitride for RF MEMS applications

et al. 2012

View full text Add to dashboard Cite

show abstract

“…The Nr-stoic SiN has higher number of Si-H bonds in comparison with Nrich film, while the number of N-H bonds in N-rich SiN film is higher than that in Nr-stoic SiN. [36][37][38]46 It has been reported that the binding energy of Si-H bonds is lower than that of N-H bonds. [39][40][41][42][43] Since Si-H bonds are weaker than N-H bonds, it is easier to break Si-H bonds compared to N-H bonds.…”

Section: Resultsmentioning

confidence: 99%

“…This is because Si-rich film has higher amount of H compared to Nr-stoic SiN film. [35][36][37][38] Although Si-rich film has high Si-dangling bonds, 38,44,45 this will not affect the growth of ZnO film because of SiO 2 layer.…”

Section: Zno Tfts With Bilayer Gate Dielectric Stack-mentioning

confidence: 99%

“…[32][33][34] A SiN film with high refractive index (silicon-rich film) has higher density of Si-H bonds compared to a low refractive index film (nitrogen-rich film). [35][36][37][38] Therefore, silicon-rich (Si-rich) films can be a better source of hydrogen compared to nitrogen-rich (N-rich) films at a lower ZnO film growth temperature, considering the fact that Si-H bonds are weaker than N-H bonds. [39][40][41][42][43] These properties together with its higher dielectric constant would make Si-rich film a better gate insulator for the MOCVD-grown ZnO TFTs, in comparison with a N-rich film.…”

mentioning

confidence: 99%

“…17 This is due to smaller grain size of ZnO channel films, which in turn is attributed to higher density of Si dangling bonds in Si-rich SiN films. 38,44,45 On the other hand, a SiN film with near-stoichiometric (Nr-stoic) composition, has lower Si dangling bonds when compared to a Si-rich SiN film, 38,44,45 and it also has higher number of Si-H bonds [36][37][38]46 when compared to a N-rich SiN film. Therefore, Nr-stoic film might be a better candidate than N-rich film for the gate insulator in MOCVD-grown ZnO TFTs.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Remashan

Choi

Park

et al. 2012

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

ZnO Thin-film transistors (TFTs) on glass substrates were fabricated using plasma-deposited silicon nitride (SiN) gate insulators having two different compositions, namely nitrogen-rich and near-stoichiometric. The ZnO films were grown by metal organic chemical vapor deposition. The TFTs using near-stoichiometric SiN gate insulator exhibit better performance compared to those using nitrogen-rich SiN, and the performance improvement can be attributed to hydrogenation of the ZnO channel region by the gate dielectric. The positive impact of near-stoichiometric SiN gate insulator on TFT performance is further demonstrated in two more different types of ZnO TFTs. The two different types of TFTs are TFTs using a bilayer gate dielectric stack and TFTs using a MgZnO layer at channel/gate dielectric interface. Both types of TFTs exhibited excellent device characteristics.

show abstract

Infrared Optical Properties of Amorphous Silicon Oxynitride and Their Theoretical Interpretation

Teschner

1990

phys. stat. sol. (a)

View full text Add to dashboard Cite

Amorphous LPCVD silicon oxynitride films of different chemical composition are investigated by ellipsometry and infrared spectroscopy. Models for the interpretation of the experimental results are derived on the basis of bonding statistics, effective medium theory of the dielectric function, and vibrational theory. The parameters of the models are determined from the well known boundary materials of the silicon oxynitride, SiO2 and Si3N4. The aim of the investigations is the derivation of systematic information about structure and physical properties depending on chemical composition of the films.

show abstract

Physical properties of memory quality PECVD silicon nitride

Cited by 15 publications

References 11 publications

Fabrication and characterization of PECVD silicon nitride for RF MEMS applications

Fabrication and characterization of PECVD silicon nitride for RF MEMS applications

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Infrared Optical Properties of Amorphous Silicon Oxynitride and Their Theoretical Interpretation

Contact Info

Product

Resources

About