2017
DOI: 10.1007/s11595-017-1563-4
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Physical properties of Al-doped ZnO and Ga-doped ZnO thin films prepared by direct current sputtering at room temperature

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Cited by 3 publications
(1 citation statement)
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“…The Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) have extensively received much attention [29,30] and are examined for their use in optoelectronic devices [31]. Due to its semiconductor (n-type) properties having a direct bandgap, AZO is often used as the transparent electrical contact for solar cells and light-emitting diodes [30,32,33].…”
Section: Introductionmentioning
confidence: 99%
“…The Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) have extensively received much attention [29,30] and are examined for their use in optoelectronic devices [31]. Due to its semiconductor (n-type) properties having a direct bandgap, AZO is often used as the transparent electrical contact for solar cells and light-emitting diodes [30,32,33].…”
Section: Introductionmentioning
confidence: 99%