Physical processes in epitaxial growth

Lewis, B.

doi:10.1016/0040-6090(71)90068-x

Cited by 48 publications

(5 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In vacuum deposition techniques, deposition rate ( R ) and substrate temperature ( T ) have been identified as key parameters to control the thin film growth process . These two terms can be used to determine the activation energy for an adatom to be stable or unstable on a substrate surface, E des . The number of atom bonds available in the substrate surface will also influence E des, particularly in ALD deposition as it depends on self-saturating surface reactions.…”

Section: Resultsmentioning

confidence: 99%

Low Temperature Epitaxial Oxide Ultrathin Films and Nanostructures by Atomic Layer Deposition

et al. 2012

View full text Add to dashboard Cite

Highly epitaxial and pure (001) CeO2 ultrathin films have been prepared by atomic layer deposition (ALD) at 275 °C on Y-stabilized ZrO2 cubic fluorite single crystal substrate using cerium β-diketonate (Ce(thd)4) and ozone (O3) as precursors. Substrate temperature and precursor pulses have been optimized to set the ALD window obtaining a growth per cycle of ≈0.2 Å/cycle. This extremely low growth rate has been identified as a key parameter to ensure epitaxial growth at these low temperatures. Post-thermal treatments at 900 °C in oxygen further improve ALD-CeO2 film texture while maintaining film stoichiometry and ultrasmooth surface, rms < 0.4 nm. ALD-CeO2 thin film growth has also been tested on perovskite single crystal substrates, SrTiO3 and LaAlO3, exhibiting CeO2 epitaxial growth and thus validating ALD as an outstanding method for low temperature epitaxial growth. Furthermore, we demonstrate that by combining e-beam lithography and ALD it is feasible to obtain size-controlled CeO2 nanostructures.

show abstract

Section: Resultsmentioning

confidence: 99%

Low Temperature Epitaxial Oxide Ultrathin Films and Nanostructures by Atomic Layer Deposition

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Typically, epitaxy requires that the substrate and deposited film have a plane with the same or related symmetry and a very small lattice mismatch, or else the lattice mismatch can be accommodated by a large number of misfit dislocations at the film/substrate interface . van der Waals epitaxy, due to the lack of covalent bonding across the van der Waals gap, allows for even larger lattice mismatches of up to 50% without the need for large numbers of misfit dislocations. − Given that there is no strong bonding across the van der Waals gap, one might assume that all vdW solids and metal combinations behave the same way, but this is not the case …”

Section: Introductionmentioning

confidence: 99%

Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide

Domask

Cooley

Kabius³

et al. 2018

Crystal Growth & Design

View full text Add to dashboard Cite

Transmission electron microscopy, in particular selected area electron diffraction, was used to investigate the orientational relationship of Al, Ag, Cu, Mn, Mo, Ni, Pd, Ru, Re, and Zn deposited via physical vapor deposition on MoS 2 at room temperature. Past work has shown that a few facecentered cubic (FCC) metals (Ag, Au, Pb, Pd, and Pt) could be deposited epitaxially on MoS 2 . However, we found that additional FCC metals (Al and Cu) could be deposited epitaxially at room temperature on MoS 2 with the orientational relationship M(111)∥MoS 2 (0001) and M[22̅ 0]∥MoS 2 [112̅ 0], while a hexagonally close-packed (HCP) metal Zn was epitaxial on MoS 2 with a M(0001)∥MoS 2 (0001) and M[112̅ 0]∥MoS 2 [112̅ 0] relationship. However, the FCC metal Ni, body-centered cubic metal Mo, and HCP metals Re and Ru were not epitaxial on deposition or even after annealing at 673 K for 4 h. By comparing the results with both physical constants and modeling of the metal/MoS 2 systems, we observed that metals with a close-packed plane with six-fold symmetry, a high homologous temperature, and a low barrier to surface diffusion on MoS 2 are more likely to grow epitaxially at room temperature on MoS 2 .

show abstract

“…In order to explain the sharp transition from a noncrystalline to a polycrystalline structure, it is therefore necessary to include the possibility of grain growth through coalescence and recrystallization. Lewis (22) has given a general account of the relative importance of nucleation density and coalescence. It is interesting to compare the values of J/D for the condensing silicon atoms with the critical value, (J/D)s, for which recrystallization is impossible before the growing film becomes continuous: (J/D)s may be estimated on the assumption that surface diffusion dominates over volume diffusion during any coalescence, from Stowell's formula (16) (J/D) s : 6.106 ~ ~1/3 Nsd3/2/(kT) where v is the surface energy of silicon and ~ is the atomic volume.…”

Section: Appendix B Assumption Of ~ I or ~ I Grain Per Nucleus; Effec...mentioning

confidence: 99%

Growth of Polycrystalline Silicon Films: Grain Size

Emmanuel

Pollock

1973

J. Electrochem. Soc.

View full text Add to dashboard Cite

energy of the conducting species with the activation energy of self-diffusion of O9. in SiO2 is also shown.The agreement in the behavior of the ti/n value as a function of Po2 and of the P and B concentrations with that predicted for O"i and h" suggests the species to be a doubly charged oxygen interstitial. A more conclusive identification would require additional experimentation, including numerical calculation of the dopant and defect concentrations. The possibility of alkali ions as the conducting species was eliminated, in that the MOS C-V curves showed less than 0.1V shift on 1OOOA test oxides stressed typically at 150~ but sometimes even as high as 300~ ABSTRACT Transmission electron microscopy has been used to study the structure of ~ olycrystalline films grown on siiicon nitride and silicon dioxide substrates y chemical vapor deposition from silane gas. The effects of substrate temperature, type of carrier gas (nitrogen or hydrogen), and gas flow rate were examined. For substrate temperatures of 720~ (993~ and above, the films were polycrystalline, and under certain conditions a uniform grain size of ca. 30 nm was obtained. At the highest temperatures (ca. 1040~176 the films were discontinuous and showed also a type of secondary structure. Results obtained by field emission microscopy have been used to show how incident flux and surface diffusion coefficient may affect grain size in polycrystalline films: it is likely that the observed noncrystalline/polycrystalline transition is affected by recrystallization, decrease in density of preferred sites for nucleation, and change in critical nucleus size.

show abstract

Physical processes in epitaxial growth

Cited by 48 publications

References 48 publications

Low Temperature Epitaxial Oxide Ultrathin Films and Nanostructures by Atomic Layer Deposition

Low Temperature Epitaxial Oxide Ultrathin Films and Nanostructures by Atomic Layer Deposition

Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide

Growth of Polycrystalline Silicon Films: Grain Size

Contact Info

Product

Resources

About