Physical/process parameter dependence of gate capacitance and ballistic performance of InAs&lt;inf&gt;y&lt;/inf&gt;Sb&lt;inf&gt;1&amp;#x2212;y&lt;/inf&gt; Quantum Well Field Effect Transistors

Niaz, Iftikhar Ahmad; Alam, Md. Hasibul; Ahmed, Imtiaz; Azim, Zubair Al; Chowdhury, Nadim; Khosru, Quazi D. M.

doi:10.1109/inec.2013.6466055

Cited by 1 publication

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“…To enhance mobility and speed, high electron mobility transistors (HEMTs) are being experimented with III-V materials (2)(3). As a result, different material systems for HEMTs are appearing (4)(5)(6). InAs/AlSb HEMT has appeared as a promising device as it has electron mobility as high as 30000cm 2 /Vs, f T and f MAX exceeding 230GHz (7).…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current

et al. 2016

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In this paper, Capacitance-Voltage (CV) characteristics and direct tunneling gate leakage performance of InAs/AlSb Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) are investigated. 1-D coupled Schrӧdinger-Poisson equations are solved for electrostatic characterization of InAs/AlSb MOS-HEMT considering wave function penetration and strain effects. Using modified Wentzel–Kramers–Brillouin (WKB) method for transmission probability, direct tunneling gate leakage current is also calculated for the MOS-HEMT structure. Dependence of CV characteristics and direct tunneling gate leakage current on some important process and physical parameters such as oxide thickness, channel thickness, capping layer composition, gate dielectric material, doping concentration of delta layer and temperature are studied in this work. Our simulation results agree the pattern of variation with the experimental results reported by H. K. Lin et al.

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