Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: A nonlinear model

Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters

“…It is known that at a wavelength of 1.06 µ m and doping levels up to 10 19 cm -3 the linear absorption coefficient of silicon increases mainly by bandgap narrowing [2]. We therefore assume that (2) where α f and are the respective fundamental absorption coefficients of doped and undoped silicon, σ f represents bandgap narrowing, and N is the doping concentration.…”

“…Computational formulae are available for the equivalent dose rates of standard silicon devices and ICs [2]. However, implementation of this approach is faced with some difficulties in calculating the ionizing effects of laser radiation over wide ranges of temperature, doping level, and incident intensity.…”

TID behavior of complex multifunctional VLSI devices

“…We also provide typical guidelines for FT procedure (both hardware and software) and present the proper gamma irradiation facility. In this paper we concentrate on TID effects experimental research but all main results and conclusions can be spread to transient radiation effects (TRE), structural radiation damage (SRD) and single event effects (SEE) [15][16][17][18].…”

Automated Data Processing System for Oscilloscope Measurements during an Environmental Test

“…Each element of the array contains the result of digitizing by 8 Integral calculation program performs the summation of all the data from an array of post-trigger, which were multiplied by the corresponding values of the scale factor sweep oscilloscope. If there is a constant component available in the signal, it will be taken into account in the final result (2).…”

“…The calibration process is an integral part of an environmental test using laser techniques to model the destabilizing effects on a device [1][2][3]. The main objective of the calibration process is a determination of the calibration factor.…”