Physical phenomena in semiconductors with negative differential conductivity

Volkov, A.F.; Kogan, Sh. M.

doi:10.3367/ufnr.0096.196812b.0633

Cited by 85 publications

(32 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3, inset b). It was considered in [6] that, in a system with SNDC, a vertical I ±V corresponds to the formation of a filament, i.e. a volume with increased current density.…”

Section: Resultsmentioning

confidence: 99%

Random Switchings and Hysteresis in I–V Characteristics of Short‐Gate GaAs Structures

Сафонов¹,

Savchenko

Tribe

et al. 2000

phys. stat. sol. (b)

View full text Add to dashboard Cite

We have performed an investigation of random telegraph switchings and hysteresis in I–V of a short‐channel GaAs MESFET, when the conductance shows insulating behavior. We have seen that, in the voltage‐fixed regime, the switching rate of the current exponentially depends on the bias and magnetic field. Measurements of I–V in the current‐controlled regime have shown that the origin of these switchings is in an S‐type behavior of I–V. In the S region, random jumps of the voltage have also been detected, as well as its periodic oscillations. We perform a comparative study of the current and voltage switchings and discuss their origin.

show abstract

“…3, inset b). It was considered in [6] that, in a system with SNDC, a vertical I ±V corresponds to the formation of a filament, i.e. a volume with increased current density.…”

Section: Resultsmentioning

confidence: 99%

Random Switchings and Hysteresis in I–V Characteristics of Short‐Gate GaAs Structures

Сафонов¹,

Savchenko

Tribe

et al. 2000

phys. stat. sol. (b)

View full text Add to dashboard Cite

show abstract

“…The voluminous literature is dedicated t o the theory of Gunn domains (see e g. [11. [ 2 ] , and references therein). But up t o date, as we know, only the theory of uniform and rectilinear motion of domains has been developed.…”

Section: Introductionmentioning

confidence: 99%

Interaction of Depletion and Accumulation Waves with Localized Defect

Bakanas

Bass

1989

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

show abstract

“…As CJ* grows due to the increase of the electric field, the differential conductivity crd = dj/dE may extend to infinity [5]. Applying (20), we can write down the following condition for C J~ = co :…”

Section: =1mentioning

confidence: 99%

“…As will be shown hereafter, a t low temperatures the anisotropy of conductivity does not only reduce but also changes its sign when elect,rons are heated. The conductivity increases with increasing electric field strength, and as in [5] current-voltage (1-77) characteristics of S-type are possible. …”

Section: Introductionmentioning

confidence: 99%

Galvanomagnetic effects in many‐valley semiconductors for strong magnetic and heating electric fields

Mitin

1972

Physica Status Solidi (b)

View full text Add to dashboard Cite

The effect of the heating of electrons on the conductivity of many-valley semiconductors in strong (but not quantitizing) transverse magnetic fields is studied. It is shown that at low temperatures the current-voltage characteristic is of S-type, when the main mecha.nism of the intervalley scattering of the hot electrons is the emission of inter-valley phonons. The anisotropy of conductivity is not only reduced but also changes it.s sign when the electric field grows. The conductivity in strong magnetic fields can be greater than a,, (uo is u for H = 0, Ez -0) within a certain region of the electric field strength. All these effects take place as a result of the influence of the Hall field on the heating of electrons and their redistribution with respect to the valleys.

show abstract

Physical phenomena in semiconductors with negative differential conductivity

Cited by 85 publications

References 0 publications

Random Switchings and Hysteresis in I–V Characteristics of Short‐Gate GaAs Structures

Random Switchings and Hysteresis in I–V Characteristics of Short‐Gate GaAs Structures

Interaction of Depletion and Accumulation Waves with Localized Defect

Galvanomagnetic effects in many‐valley semiconductors for strong magnetic and heating electric fields

Contact Info

Product

Resources

About