Physical Origin of Negative Differential Resistance in V<sub>3</sub>O<sub>5</sub> and Its Application as a Solid‐State Oscillator

Nandi, Sanjoy Kumar; Marquez, Camilo Verbel; Rúa, Armando; Uenuma, Mutsunori; Puyoo, Etienne; Nath, S. K.; Albertini, David F.; Baboux, Nicolas; Lü, Teng; Liu, Yun; Haeger, Tobias; Heiderhoff, R.; Riedl, Thomas; Ratcliff, Thomas; Elliman, R. G.

doi:10.1002/adma.202208477

Cited by 19 publications

(18 citation statements)

References 63 publications

(50 reference statements)

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“…[167] The assumption that electrically driven MIT and temperature-driven MIT could be independent was an interesting subject of research in other materials. [168][169][170][171] This independence has the potential to serve as a useful lever for inducing deterministic behavior in complex systems. [172] Therefore, it is necessary to examine and approach the mechanisms of these materials from various perspectives.…”

Section: Other Materialsmentioning

confidence: 99%

Nanoelectronics Using Metal–Insulator Transition

Lee,

Kim,

Gim

et al. 2023

Advanced Materials

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Metal‐insulator transition coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next‐generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, we highlight recent progress in the field of nanoelectronics utilizing MIT. We begin with a brief introduction to the physics of MIT and its underlying mechanisms. After discussing the MIT behaviors of various Mott insulators, we describe recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks. Finally, we provide an outlook on the development and future applications of nanoelectronics utilizing MIT. This review can serve as an overview and a comprehensive understanding of the design of MIT‐based nanoelectronics for future electronic and optoelectronic devices.This article is protected by copyright. All rights reserved

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Section: Other Materialsmentioning

confidence: 99%

Nanoelectronics Using Metal–Insulator Transition

Lee,

Kim,

Gim

et al. 2023

Advanced Materials

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“…An appropriate source can be applied across the device to match the measurement protocols and a source and line capacitance has also been included to accurately model the physics of the system. It has been shown in other studies − that only a part of the channel participates in the phase transition, which is modeled here as a non-linear resistor ( R d ) that changes with device temperature as per the conductivity vs temperature characteristics , ) of the non-active region in the channel and is assumed to be relatively independent of temperature as substantiated by our thermal model.…”

Section: Experimental Work and Modelingmentioning

confidence: 99%

Dynamics of Voltage-Driven Self-Sustained Oscillations in NdNiO₃ Neuristors

Upanya

Guo

Noheda

et al. 2023

ACS Appl. Electron. Mater.

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Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials showing conduction mechanisms that depend superlinearly on temperature can lead to negative differential resistance (NDR) regimes, which may further be engineered as self-oscillators. Thermal runaway effects or insulator-to-metal phase transitions (IMTs) can lead to such superlinearity and are being extensively studied in systems such as TaO x , NbO x , and VO2. However, ReNiO3 systems that offer large tunability in metal–insulator transition temperatures are less explored so far. Here, we demonstrate all-or-nothing neuron-like self-oscillations at MHz frequency and low temperatures on thin films of NdNiO3, a model charge-transfer insulator, and their frequency coding behavior. We study the temperature dependence of NDR and show that it vanishes even at temperatures below the IMT temperature. We also show that the threshold voltages scale with device size and that a simple electrothermal device model captures all these salient features. In contrast to existing models, our model correctly predicts the independence of oscillation amplitude with the applied voltage, offering crucial insights about the nature of fixed points in the NDR region, and the dynamics of non-linear oscillations about them.

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“…This device has been highlighted for its potential applications in multilevel logic, [4][5][6] randomaccess memory (RAM), [7][8][9] and oscillator systems. [10][11][12] The NDR phenomenon exhibits a drastic current drop at a specific voltage range and an N-shaped currentvoltage (I-V ) curve under an applied bias. This unique current behavior provides several advantages in multiple threshold point [5,13] and resistive bistability.…”

Section: Introductionmentioning

confidence: 99%

Temperature‐Dependent Phase Transition in WS₂ for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

Woo,

Cho,

Yeom

et al. 2023

Small Science

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In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance improvements. In this article, a facile phase modification method is presented via a plasma‐assisted sulfidation process to synthesize multiphased WS2 thin films, including distorted 1 T (D‐1 T) phase and 2 H phases for photoreactive NDR devices with p‐Si. The D‐1 T phase offers a feasible route to achieve high‐performance NDR devices with excellent stability and semimetallic properties. A comprehensive investigation of experimental and computational analyses elucidates the phase transition mechanism with various temperatures and electrical properties of D‐1 T WS2. In addition, optimizing electron tunneling in the multiple‐phased tungsten disulfide (MP‐WS2)/p‐Si heterojunction at MP‐WS2 with 77.4% D‐1 T phase results in superior NDR performance with a peak‐to‐valley current ratio of 13.8 and reliable photoreactive random‐access memory. This unique phase engineering process via plasma‐assisted sulfidation provides a pioneering perspective in functionalization and reliability for next‐generation nanoelectronics.

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Physical Origin of Negative Differential Resistance in V₃O₅ and Its Application as a Solid‐State Oscillator

Abstract: The relative change in thermal conductivity with temperature was less prone to error, with the uncertainty determined from the correlation coefficients of the resulting U 3ω versus ln ω slopes.

Cited by 19 publications

References 63 publications

Nanoelectronics Using Metal–Insulator Transition

Nanoelectronics Using Metal–Insulator Transition

Dynamics of Voltage-Driven Self-Sustained Oscillations in NdNiO₃ Neuristors

Temperature‐Dependent Phase Transition in WS₂ for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

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Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid‐State Oscillator

Abstract: The relative change in thermal conductivity with temperature was less prone to error, with the uncertainty determined from the correlation coefficients of the resulting U 3ω versus ln ω slopes.

Cited by 19 publications

References 63 publications

Nanoelectronics Using Metal–Insulator Transition

Nanoelectronics Using Metal–Insulator Transition

Dynamics of Voltage-Driven Self-Sustained Oscillations in NdNiO3 Neuristors

Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

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Product

Resources

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Physical Origin of Negative Differential Resistance in V₃O₅ and Its Application as a Solid‐State Oscillator

Dynamics of Voltage-Driven Self-Sustained Oscillations in NdNiO₃ Neuristors

Temperature‐Dependent Phase Transition in WS₂ for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application