Abstract:This paper presents a one-dimensional HBT physical model which can accurately simulate the characteristics of microwave power transistors. The structure of the model is briefly discussed, and simulation results for a three layer device are presented and compared with analytical results. Measured and modelled DC characteristics for a power HBT are also presented, and these show good agreement over several decades of base and collector current.
HBT Physical ModelHBTs are becoming increasingly popular for use in … Show more
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