Physical Modeling and Simulation of Thermal Heating in Vertical Integrated Circuits

Boukili, Abderrazzak El

doi:10.5121/ijcses.2013.4201

Cited by 6 publications

(1 citation statement)

References 12 publications

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“…Let us note that functionals of the form (1.12) also appear in the context of charged particle flow in semiconductor devices, see, e.g., [10].…”

Section: Introductionmentioning

confidence: 99%

Emergence of biological transportation networks as a self-regulated process

Haškovec¹,

Markowich²,

Portaro³

2022

Preprint

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We study self-regulating processes modeling biological transportation networks. Firstly, we write the formal L 2 -gradient flow for the symmetric tensor valued diffusivity D of a broad class of entropy dissipations associated with a purely diffusive model. The introduction of a prescribed electric potential leads to the Fokker-Planck equation, for whose entropy dissipations we also investigate the formal L 2 -gradient flow. We derive an integral formula for the second variation of the dissipation functional, proving convexity (in dependence of diffusivity tensor) for a quadratic entropy density modeling Joule heating. Finally, we couple in the Poisson equation for the electric potential obtaining the Poisson-Nernst-Planck system. The formal gradient flow of the associated entropy loss functional is derived, giving an evolution equation for D coupled with two auxiliary elliptic PDEs.

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“…Let us note that functionals of the form (1.12) also appear in the context of charged particle flow in semiconductor devices, see, e.g., [10].…”

Section: Introductionmentioning

confidence: 99%

Emergence of biological transportation networks as a self-regulated process

Haškovec¹,

Markowich²,

Portaro³

2022

Preprint

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Thermal and Electrical Performance of AlGaAs/GaAs based HEMT device on SiC substrate

Iype¹,

Babu²,

Paul³

2021

J. Phys.: Conf. Ser.

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In this paper investigation on electrical and thermal performance of the AlGaAs/GaAs HEMT device is carried out by comparing the device grown on substrates like 4H-SiC and Sapphire. The investigation was carried out based on Silvaco TCAD Atlas simulation. The DC characteristics of the device with varying ambient temperature were evaluated. A deterioration of drain current from 0.9 mA to 0.5 mA is observed as temperature rises from 300K to 500K on 4H-SiC substrate. The HEMT grown on 4H-SiC substrate has a high power dissipation, resulting in reduced temperature compared to sapphire substrate. This increases the lifetime of the device by 1000s of hours and also its overall performance. The HEMT proposed here is found to have an electrically and thermally optimal performance on 4H-SiC substrate than on sapphire

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