Physical Modeling and Scaling Properties of 4H-SiC Power Devices

Hatakeyama, Tatsuko; Nishio, Johji; Ota, Chiharu; Sügimura, Takashi

doi:10.1109/sispad.2005.201500

Cited by 37 publications

(28 citation statements)

References 1 publication

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“…The reverse BVs measured on the 30 μm PiN diodes with all termination structures and HD, MD, and LD JTE doses are shown with symbols. Also shown in the figures are the simulation results for these termination structures using the impact ionization models from reference [12] (dashed line) and [13] (solid line). structure [7].…”

Section: Experimental Results and Discusionmentioning

confidence: 99%

“…Note that two impact ionization models were applied in the simulation. Using the default model [12] in a semiconductor simulator, Silvaco, the simulated maximum breakdown voltage was 3610 V for all these terminations [8], which was much smaller than the 4800 V measured from the device using CD-JTE plus OR with MD JTE. However, when using the model in reference [13], the measured BVs were more consistent with the simulation for all termination structures.…”

Section: Experimental Results and Discusionmentioning

confidence: 99%

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Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices

Jiang

Hsu

Chu

et al. 2015

IEEE Electron Device Lett.

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In this paper, a counter-doped junction termination extension (CD-JTE) structure was experimentally implemented and studied. Two groups of 4H-SiC PiN diodes were fabricated with two n-type drift layer thicknesses of 11 μm and 30 μm respectively, and with different termination structures, in order to demonstrate the wide JTE dose tolerance of CD-JTE. Three different doses, 1.7×10 13 cm -2 , 2.2×10 13 cm -2 , and 2.8×10 13 cm -2 , were used for the critical JTE implantation. The measured breakdown voltages (BV) of the diodes with all termination structures and JTE doses were compared with simulation predictions. Electroluminescence (EL) at the breakdown voltage was recorded and used to locate the peak electrical field. The test results matched well with simulation. As a result of the effectiveness and robustness of the CD-JTE, the best achieved BVs from the diodes on the 11 μm and 30 μm epi-layers were 1850 V and 4800 V, respectively.

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Section: Experimental Results and Discusionmentioning

confidence: 99%

Section: Experimental Results and Discusionmentioning

confidence: 99%

Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices

Jiang

Hsu

Chu

et al. 2015

IEEE Electron Device Lett.

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“…For the average electronhole pair creation energy in SiC, a value of was used, which is an average between the recently published experimental values of [17] and [18]. For modeling the avalanche multiplication, an anisotropic impact ionization model that is especially developed and calibrated for 4H-SiC power devices [19] has been implemented in Silvaco TCAD tools, and was used in this work. Also, the thermionic emission model was activated in all simulations.…”

Section: Tcad Simulations and Discussionmentioning

confidence: 99%

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Javanainen

Turowski²,

Galloway

et al. 2017

IEEE Trans. Nucl. Sci.

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“…b The formed energy level is considered from the valence band (E V ). Notably, it has been found in [26] that these values are relatively insensitive to temperature variations in the range of 300 K < T < 500 K. For 4H-SiC, a slightly different model is utilized after Hatakeyama's work [27] to effectively describe the anisotropic behaviour of the avalanche coefficients. The avalanche force is considered to have two components to account for the anisotropic structure of 4H-SiC [28], satisfying…”

Section: Doping and Incomplete Ionizationmentioning

confidence: 99%

TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors

Lophitis¹,

Arvanitopoulos²,

Perkins³

et al. 2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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Technology computer-aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However, most TCAD tools were originally developed for silicon and their performance and accuracy for wide bandgap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide bandgap power semiconductors. In particular, modelling and simulating 3C-and 4H-Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analyzed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed.

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Physical Modeling and Scaling Properties of 4H-SiC Power Devices

Cited by 37 publications

References 1 publication

Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices

Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors

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