Physical model for enhanced interface-trap formation at low dose rates

Rashkeev, Sergey N.; Cirba, C.R.; Fleetwood, D. M.; Schrimpf, R.D.; Witczak, S.C.; Michez, A.; Pantelides, Sokrates T.

doi:10.1109/tns.2002.805387

Cited by 178 publications

(60 citation statements)

References 22 publications

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“…This leads to enhanced low-dose-rate sensitivity (ELDRS) in these bipolar technologies. Several models have been proposed to explain ELDRS [18,19,20,21,22,23]. The most widely accepted model is a space-charge model [18,19,22,23].…”

Section: Project Description and Discussionmentioning

confidence: 99%

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Radiation aging of stockpile and space-based microelectronics.

Hembree¹,

Hjalmarson²

2004

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This report describes an LDRD-supported experimental-theoretical collaboration on the enhanced low-dose-rate sensitivity (ELDRS) problem. The experimental work led to a method for elimination of ELDRS, and the theoretical work led to a suite of bimolecular mechanisms that explain ELDRS and is in good agreement with various ELDRS experiments. The model shows that the radiation effects are linear in the limit of very low dose rates. In this limit, the regime of most concern, the model provides a good estimate of the worst-case effects of low dose rate ionizing radiation.

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Section: Project Description and Discussionmentioning

confidence: 99%

“…However, at low dose rates the space charge is too small to have an effect. As a consequence, this model predicts that approximately twice as many interface traps are produced at low dose rates [23].…”

Section: Project Description and Discussionmentioning

confidence: 99%

Radiation aging of stockpile and space-based microelectronics.

Hembree¹,

Hjalmarson²

2004

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“…This requires in the first place a good understanding of he physical mechanisms involved, which can be obtained by either ab-initio calculations (see e.g. [29][30]) or semi-empirical approaches. Examples of the latter are e.g.…”

Section: Radiation Modelingmentioning

confidence: 99%

Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

Claeys

Simoen

2004

Simulation of Semiconductor Processes and Devices 2004

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The paper first describes the basic radiation-induced mechanisms such as transient effects, ionization phenomena and displacement damage. Subsequently, the impact of irradiation on advanced CMOS technology nodes is demonstrated in order to illustrate the underlying physical phenomena. Both bulk and silicon-on-insulator (SOI) technologies will be addressed. A third section discusses the present understanding and the difficulties associated with modeling of irradiation-induced device degradation. Finally, an outlook is given for some emerging semiconductor technologies such as e.g. SiGe, strained silicon, Ge and GeOI. Some aspects of cryogenic irradiations, of key importance for space applications, are also briefly mentioned.

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“…On the first stage the defect formation take place on interface Si-SiO 2 from the oxide side. This process is described by an exponential dependence (Rashkeev et al, 2002). In the second stage "additional" surface defects are formed from the Si side.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Surface Defects in N-Channel MOS Transistors Under Long-Term Low-Dose-Rate Irradiation

Попов¹

2017

JMSR

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Gamma-radiation is commonly used to study surface defects in MOS transistors. Early experiments show two stages of surface-defect formation in a MOS structure under low-intensity gamma irradiation (Popov & Vin, 2014; Popov, 2016). On the first stage the defect formation take place on interface Si-SiO2 from the oxide side. This process is described by an exponential dependence (Rashkeev et al., 2002). In the second stage “additional” surface defects are formed from the Si side. Radiation defects of silicon migrated to interface Si-SiO2 from the semiconductor.The goal of this paper is investigation of surface-defect formation in a MOS transistor using the changing of surface electron mobility.

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Physical model for enhanced interface-trap formation at low dose rates

Cited by 178 publications

References 22 publications

Radiation aging of stockpile and space-based microelectronics.

Radiation aging of stockpile and space-based microelectronics.

Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

Investigation of the Surface Defects in N-Channel MOS Transistors Under Long-Term Low-Dose-Rate Irradiation

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