Abstract:N-well doping concentration plays an important role in singleevent transient (SET) characteristic of transistors. While adjusting the Nwell doping parameter within a proper range, it has little effect on the basic electrical performance of P-type MOSFET. The physical mechanism of well doping effects on the SET of PMOS is observed. The collapse and recovery of N-well potential, which are the critical factors that influences the SET pulse width, are analyzed by TCAD simulations. The result shows that well doping… Show more
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