Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys

Ramírez-López, M.; Cruz-Bueno, J.J.; Flores-Ramírez, D.; Villa-Martínez, G.; Trejo-Hernández, R.; Reséndiz-Mendoza, L.M.; Rodríguez-Fragoso, P.; Casallas-Moreno, Y.L.

doi:10.1016/j.mssp.2023.108090

Materials Science in Semiconductor Processing

2024

DOI: 10.1016/j.mssp.2023.108090

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Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys

M. Ramírez-López,

J.J. Cruz-Bueno,

D. Flores-Ramírez

et al.

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Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys

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References 56 publications

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