Physical Mechanism of Device Degradation & its Recovery Dynamics of p-GaN Gate HEMTs Under Repetitive Short Circuit Stress

TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE

“…The generation of traps by hot electrons is usually the main cause of permanent degradation, a fundamental limit to ruggedness and longterm reliability. Similar effects have been observed in p-GaN gate HEMTs under repetitive short-circuit stress, where hotelectron-induced defects result in a irreversible shift of V TH and a reduction of the drain current [4]. The past experience with silicon has shown that accurate predictions of hot-carrier-stress degradation can be obtained if the carrier dynamics is described by using a microscopic model, thus solving the Boltzmann transport equation (BTE) for electrons including the full-band structure and the main scattering rates.…”