Physical limitations of polycrystalline thin film photoelectric devices

Pawlikowski, Janusz

doi:10.1016/0040-6090(90)90129-2

Cited by 15 publications

(5 citation statements)

References 71 publications

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“…The angles between the neighbouring grains are often large. The grain boundary region in a polycrystalline film consists of a large number of defects which act as effective carrier traps (Sinitsyn 1988, Paulikowski 1990, Permogorov and Reznisky 1992. A potential barrier (E b ) appears across the grain boundary region due to trap states.…”

Section: Temperature Dependence Of Conductivitymentioning

confidence: 99%

Electrical properties of two-source evaporated polycrystalline films

Rao¹,

Hussain²,

Naidu³

et al. 1997

Semicond. Sci. Technol.

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The compositional dependence of electrical properties such as thermoelectric power, carrier concentration and conductivity, of two-source vacuum evaporated Cd 1−x Zn x Te polycrystalline thin films (0 ≤ x ≤ 1) were investigated. The temperature dependence of conductivity was studied in the range 100-400 K and the films were found to exhibit two activation energies. Analysis of the activation energy in the low-temperature region led to the conclusion that the electrical conduction might be due to charge carriers in fully ionized trap states of the partially depleted grains, while the conduction in the high-temperature region might be due to thermionic emission of charge carriers from grains.

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Section: Temperature Dependence Of Conductivitymentioning

confidence: 99%

Electrical properties of two-source evaporated polycrystalline films

Rao¹,

Hussain²,

Naidu³

et al. 1997

Semicond. Sci. Technol.

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“…The main advantage of WS 2 is the prevention of electrolyte corrosion, because the phototransitions involve nonbonding d-d orbitals of W atoms [5]. Pawlikowski [13] has shown that the performance of photoelectric devices may be improved by growing thin films that have vertical grain boundaries; so it should be interesting to obtain textured WS 2 thin films. Therefore we have investigated a new technique to obtain WS 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

thin films prepared by solid state reaction (induced by annealing) between the constituents in thin film form

Li¹,

Bernède²,

Pouzet³

et al. 1996

J. Phys.: Condens. Matter

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thin films were obtained by solid state reaction (induced by annealing under S pressure) between the W and S constituents in thin film form. The tungsten layers were deposited by RF sputtering, while S layers were evaporated. The thickness of the layers varied between 50 and 100 nm. The films have been investigated using x-ray photoelectron spectroscopy, scanning electron microscopy, x-ray diffraction, optical absorption and conductivity measurements. The effects of annealing conditions (duration and temperature) on the crystallization and composition of the films have been investigated. The films were crystallized in the hexagonal structure. To complete the reaction between W and S, annealing under S pressure at a temperature of at least 820 K for 24 h is required. Under these conditions the films were nearly stoichiometric. The best films present a c-axis length of 1.2500 nm and an a-axis length of 0.3185 nm. All the films were found to be preferentially oriented with the c axis perpendicular to the plane of the substrate. The degree of preferential orientation was found to increase slightly with increasing annealing time and/or temperature. The nearly stoichiometric films present good optical properties, similar to those of single crystals. The conductivity of the films depends strongly on the annealing conditions, i.e. on their composition and on their crystallization state.

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“…In polycrystalline semiconductor thin films, the constituent atoms at the grain boundary are disordered, and hence, there are large numbers of defects due to incomplete atomic bonding (dangling bond). This may result in the existence of surface states [22]. In our case, the barrier heights have been found to be less dependent on the work function of the barrier metals.…”

Section: Current-voltage Characteristicsmentioning

confidence: 94%

Study of Au, Ni-(n)ZnSe Thin Film Schottky Barrier Junctions

Chaliha¹,

Borah²,

Sarmah

et al. 2009

Int J Thermophys

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Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin films of doping concentrations up to 9.7×10 14 cm −3 have been fabricated with Au and Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions of different doping concentrations exhibited rectifying current-voltage characteristics with a non-saturating reverse current. From the current-voltage characteristics, the different junction parameters such as ideality factor, saturation current density, series resistance, etc., were measured. Both types of junctions were found to possess a high ideality factor and a high series resistance. The barrier heights of the junctions were measured from Richardson plots and found to be around 0.8 eV. The structures were found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The diode quality as well as the photovoltaic performance of the diodes were improved following a short heat treatment in vacuum.

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Physical limitations of polycrystalline thin film photoelectric devices

Cited by 15 publications

References 71 publications

Electrical properties of two-source evaporated polycrystalline films

Electrical properties of two-source evaporated polycrystalline films

thin films prepared by solid state reaction (induced by annealing) between the constituents in thin film form

Study of Au, Ni-(n)ZnSe Thin Film Schottky Barrier Junctions

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