2014
DOI: 10.1016/j.ceramint.2014.05.062
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Physical investigations on MoO3 sprayed thin film for selective sensitivity applications

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Cited by 90 publications
(36 citation statements)
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“…As NiO is a direct semiconductor transition, optical band gap can be deduced by using the following relation [43][44][45] …”
Section: ) Band Gap Energy Calculationmentioning
confidence: 99%
“…As NiO is a direct semiconductor transition, optical band gap can be deduced by using the following relation [43][44][45] …”
Section: ) Band Gap Energy Calculationmentioning
confidence: 99%
“…Furthermore, this method can be selected for film production of large area with size grain controllable by controlling the doping concentration. Also, this technique leads to a large production area and it permits also the formation of thin films with possible control of oxygen vacancy by means of the use of both appropriate precursors and postannealing treatments in air [12][13][14][15].…”
Section: Methods Of Preparation and Characterization Techniquesmentioning
confidence: 99%
“…Using grain size values (table 5), the dislocation density δ dis defined as the imperfection in crystal has been calculated using the Williamson and Smallman's formula [38]:…”
Section: Structural Analysesmentioning
confidence: 99%