2006 International Interconnect Technology Conference 2006
DOI: 10.1109/iitc.2006.1648684
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Physical, Electrical, and Reliability Characterization of Ru for Cu Interconnects

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Cited by 38 publications
(29 citation statements)
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“…This facilitates the improved particle to particle contact [20,27,28]. In addition, the observed results could be due to good adhesion of copper with ruthenium [29]. The Ru content might aid in filling of the voids or pores which resulted in particle to particle interlocking.…”
Section: Density and Porositymentioning
confidence: 98%
“…This facilitates the improved particle to particle contact [20,27,28]. In addition, the observed results could be due to good adhesion of copper with ruthenium [29]. The Ru content might aid in filling of the voids or pores which resulted in particle to particle interlocking.…”
Section: Density and Porositymentioning
confidence: 98%
“…Spark plasma sintering involves (relative piston travel as an indirect measure of densification and changes in the thickness of a sample die to movement of punches against the die with time is indicated by displacement [14][15][16]. The expansion or shrinkage is as a result of displacement towards the negative or positive direction [17].…”
Section: Sintering Behaviours Of the Mixed Powders During Spark Plasmmentioning
confidence: 99%
“…Soo et al reported that ALD-Ru (4 nm)/ALD-TaCN (2 nm) prevented copper diffusion up to 550 1C and increasing the ALD-Ru to 12 nm prevented the diffusion of copper up to a temperature of 600 1C for 30 min [9]. However, Yang et al [10] reported that a thin layer of Ru by itself was not a sufficient barrier layer and suggested that Ru on TaN forms a better barrier than TaN alone.…”
Section: Introductionmentioning
confidence: 99%