Abstract:In this article, we report on the development of an analytical model to estimate area-specific ON-state resistance (RON) of GaN-based power high electron mobility transistor (HEMT) using rated device specifications – ON-state drain current (ION) and maximum operating drain-to-source voltage (VDSO) – as input parameters. The rated ION and VDSO are considered as fractions k and S, of the maximum possible drain current (IDS,max) and breakdown voltage (VBR), respectively, deliverable by the power device. The devel… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.