Physical characterization of CuO thin films obtained by thermal oxidation of vacuum evaporated Cu

Djebian, R.; Boudjema, B.; Kabir, A.; Sedrati, C.

doi:10.1016/j.solidstatesciences.2020.106147

Cited by 23 publications

(9 citation statements)

References 35 publications

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“…The standard values of lattice parameters are, ɑ = 3b) and are in good compliance with those reported in the literature. 31,32 Figure 3b shows that the lattice parameters a is inversely related with c. As a function of film thickness, when parameter a increases the parameter c decreases, and vice-versa. This may occur due to the strain value is significantly lower because of the residual stress in the deposited films.…”

Section: =mentioning

confidence: 99%

Effects of withdrawal speed on the structural, morphological, electrical, and optical properties of CuO thin films synthesized by dip-coating for CO2 gas sensing

et al. 2021

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Copper oxide (CuO) thin films have been deposited on glass substrates by a facile sol-gel dipcoating technique with varying withdrawal speeds from 0.73 to 4.17 mm/s. The variation of film thickness manifested by dip-coating withdrawal speeds was investigated in detail to investigate its effect on the structural, morphological, opto-electrical, and wettability properties of CuO thin films for CO2 gas-sensing applications. The crystallinity, as well as phase purity of dip-coated CuO, were confirmed by both X-ray diffraction (XRD) and Raman spectral analyses. The surface morphology of the films characterized by the scanning electron microscopy (SEM) revealed that pore density decreases with the increase of withdrawal speeds and grain size is found to increase with the increase of film thickness corroborating the XRD results. The optical bandgap of dipcoated CuO films was estimated in the range of 1.47 -1.52 eV from the UV-VIS-NIR transmission data and it is found to decrease with the increment of Urbach tail states accompanied by the increase of film thickness. The ratio of the electrical and optical conductivity of CuO films is found to decrease with increasing withdrawal speeds due to the variation of carrier concentration. Among all the studied films, the sample deposited to a 0.73 mm/s withdrawal speed exhibited the highest crystallinity, porous morphology, highest pore density, opto-electrical conductivity as well as water contact angle, and therefore maximum gas sensing response of carbon dioxide (CO2) vapor in the air recorded at room temperature.

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Section: =mentioning

confidence: 99%

Effects of withdrawal speed on the structural, morphological, electrical, and optical properties of CuO thin films synthesized by dip-coating for CO2 gas sensing

et al. 2021

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“…Oxidation is accomplished by annealing in an air atmosphere inside a tubular furnace [ 34 , 35 ]. CuO was grown on glass substrates using the above procedure [ 36 ]. NiO thin films were grown using thermal oxidation, and Ni metal was deposited using magnetron sputtering on quartz substrates at ambient conditions [ 37 ].…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

“…Another often overlooked factor is the oxidation time. Indeed, this factor could affect the crystallinity of thin films [ 36 ].…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Moumen

Kumarage

Comini

2022

Sensors

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This review focuses on the synthesis of p-type metal-oxide (p-type MOX) semiconductor thin films, such as CuO, NiO, Co3O4, and Cr2O3, used for chemical-sensing applications. P-type MOX thin films exhibit several advantages over n-type MOX, including a higher catalytic effect, low humidity dependence, and improved recovery speed. However, the sensing performance of CuO, NiO, Co3O4, and Cr2O3 thin films is strongly related to the intrinsic physicochemical properties of the material and the thickness of these MOX thin films. The latter is heavily dependent on synthesis techniques. Many techniques used for growing p-MOX thin films are reviewed herein. Physical vapor-deposition techniques (PVD), such as magnetron sputtering, thermal evaporation, thermal oxidation, and molecular-beam epitaxial (MBE) growth were investigated, along with chemical vapor deposition (CVD). Liquid-phase routes, including sol–gel-assisted dip-and-spin coating, spray pyrolysis, and electrodeposition, are also discussed. A review of each technique, as well as factors that affect the physicochemical properties of p-type MOX thin films, such as morphology, crystallinity, defects, and grain size, is presented. The sensing mechanism describing the surface reaction of gases with MOX is also discussed. The sensing characteristics of CuO, NiO, Co3O4, and Cr2O3 thin films, including their response, sensor kinetics, stability, selectivity, and repeatability are reviewed. Different chemical compounds, including reducing gases (such as volatile organic compounds (VOCs), H2, and NH3) and oxidizing gases, such as CO2, NO2, and O3, were analyzed. Bulk doping, surface decoration, and heterostructures are some of the strategies for improving the sensing capabilities of the suggested pristine p-type MOX thin films. Future trends to overcome the challenges of p-type MOX thin-film chemical sensors are also presented.

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“…La Tabla 1 resume los valores obtenidos para cada set de muestras TT-B, TT-C y TT-D. Tal como puede apreciarse en la Figura 3b, y considerando la barra de incertidumbre de cada valor, se encuentra que dicho valor permanece constante y es independiente del tratamiento térmico aplicado en este rango de temperaturas y tiempos, mostrando que aplicar 400 °C en los rangos de tiempos trabajados, no modifica el tamaño del cristalito; esto acorde a otros trabajos reportados en la literatura para rangos de temperatura por debajo de 400 °C (31)(32)(33) .…”

Section: Figura 2 Patrones De Difracción De Rayos X Para La Muestra P...unclassified

Influencia del tratamiento térmico en las propiedades estructurales y ópticas de nanoestructuras basadas en óxidos de cobre

Tamayo¹,

Marín

Gross

et al. 2021

inycomp

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Este trabajo muestra la influencia de diferentes condiciones de tratamientos térmicos sobre el crecimiento de nanoestructuras de óxidos de cobre, las cuales se forman al someter una película de cobre de 388 ± 7 nm de espesor a una temperatura de 400 °C en atmósfera de aire. Las capas delgadas de cobre se crecieron sobre sustratos de silicio, mediante la técnica de evaporación térmica. Los parámetros involucrados en este estudio son: la condición inicial para la cual las muestras llegan a 400 °C, es decir, con rampa y sin rampa de calentamiento y el tiempo de recocido. Basándose en los resultados obtenidos por microscopía electrónica de barrido y difracción de rayos X, fue posible establecer que los tratamientos térmicos, generan un cambio tanto en la estructura cristalina como en la morfología de la capa de Cu, mediado por la formación de nanoestructuras de carácter mixto, conformadas por una mezcla de fases referentes a Cu metálico, Cuprita (Cu2O) y Tenorita (CuO), siendo el CuO la fase mayoritaria en todas las muestras nanoestructuradas. El tamaño de grano promedio se encuentra en un rango entre 21 – 53 nm y muestra una dependencia con el tipo de tratamiento térmico. Por otra parte, las propiedades ópticas del material fueron evaluadas por espectroscopia UV-VIS, evidenciando bandas de absorción en ambas regiones (ultravioleta y visible), las cuales fueron analizadas por el método de extrapolación de Tauc; obteniendo valores para la banda prohibida entre (1.40 – 1.47) eV, asociados a una conductividad tipo-P propia de esta clase de óxidos metálicos semiconductores.

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Physical characterization of CuO thin films obtained by thermal oxidation of vacuum evaporated Cu

Cited by 23 publications

References 35 publications

Effects of withdrawal speed on the structural, morphological, electrical, and optical properties of CuO thin films synthesized by dip-coating for CO2 gas sensing

Effects of withdrawal speed on the structural, morphological, electrical, and optical properties of CuO thin films synthesized by dip-coating for CO2 gas sensing

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Influencia del tratamiento térmico en las propiedades estructurales y ópticas de nanoestructuras basadas en óxidos de cobre

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