Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics

Abstract

The results of numerical simulation allow to investigate the thermal conditions received by active heaters influence on the thermoelastic stresses and gas inclusions in sapphire. We carried out the experiments for defects detection in sapphire crystals. We suggest the recommendations about sapphire crystals growth and processing improvement for profitability increase in sapphire substrates production for microelectronics.